SiA519EDJ

Note : Your request will be directed to Vishay.

SiA519EDJ Image

The SiA519EDJ from Vishay is a MOSFET with Continous Drain Current 4.5 A, Drain Source Resistance 32 to 137 Milliohm, Drain Source Breakdown Voltage -20 V, Gate Source Voltage -12 to 12 V, Gate Source Threshold Voltage -1.4 to -0.5 V. Tags: Surface Mount. More details for SiA519EDJ can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiA519EDJ
  • Manufacturer
    Vishay
  • Description
    -20 V, N-Channel, P-Channel MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode, P-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel, P-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4.5 A
  • Drain Source Resistance
    32 to 137 Milliohm
  • Drain Source Breakdown Voltage
    -20 V
  • Gate Source Voltage
    -12 to 12 V
  • Gate Source Threshold Voltage
    -1.4 to -0.5 V
  • Gate Charge
    5.3 to 10.5 nC
  • Power Dissipation
    7.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SC-70

Technical Documents