SiDR510EP

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SiDR510EP Image

The SiDR510EP from Vishay is a MOSFET with Continous Drain Current 148 A, Drain Source Resistance 3 to 4.2 Milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiDR510EP can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiDR510EP
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, 150 W, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    148 A
  • Drain Source Resistance
    3 to 4.2 Milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    54 nC
  • Power Dissipation
    150 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8DC
  • Applications
    Synchronous rectification, Primary side switch, DC/DC converters, OR-ing and hot swap switch, Power supplies, Motor drive control, Battery management

Technical Documents