SiHP25N60EFL Image

SiHP25N60EFL

Note : Your request will be directed to Vishay.

The SiHP25N60EFL from Vishay is a MOSFET with Continous Drain Current 25 A, Drain Source Resistance 127 to 146 milliohm, Drain Source Breakdown Voltage 600 V, Gate Source Voltage -30 to 30 V, Gate Source Threshold Voltage 3 to 5 V. Tags: Through Hole. More details for SiHP25N60EFL can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiHP25N60EFL
  • Manufacturer
    Vishay
  • Description
    600 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Technology
    Silicon
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    25 A
  • Drain Source Resistance
    127 to 146 milliohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    3 to 5 V
  • Gate Charge
    50 to 75 nC
  • Power Dissipation
    250 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Commercial, Medical
  • RoHS Compliant
    Yes
  • Package Type
    Through Hole
  • Package
    TO-220AB
  • Applications
    Telecommunications - Server and telecom power supplies, Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs), Consumer and computing - ATX power supplies, Industrial - Welding - Battery chargers, Renewable energy - Solar (PV inverters)

Technical Documents

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.