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SiHR080N60E-T1-GE3 Image

The SiHR080N60E-T1-GE3 from Vishay is a Power MOSFET that is ideal for server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), high-intensity discharge (HID, fluorescent ballast lighting, welding, Induction heating, motor drives, battery chargers, and solar PV inverters applications. It has a drain-source breakdown voltage of 600 V, a gate threshold voltage of less than 5 V, and a drain-source on-resistance of less than 0.074 ohms. This MOSFET has a continuous drain current of up to 51 A and a power dissipation of less than 500 W. It offers a low figure of merit (FOM) and is characterized by a combination of reduced on-resistance and gate charge, resulting in enhanced efficiency. This 4th generation-based power MOSFET is avalanche energy-rated (UIS) to ensure robustness and reliability under extreme conditions. This RoHS-compliant is available in a surface-mount package that measures 8.46 x 11.77 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    600 V Power MOSFET for SMPS Applications


  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
  • Dimensions
    8.46 x 11.77 mm
  • Continous Drain Current
    51 A
  • Drain Source Resistance
    74 milli-ohm
  • Drain Source Breakdown Voltage
    600 V
  • Gate Source Voltage
    -30 to 30 V
  • Gate Source Threshold Voltage
    5 V
  • Gate Charge
    42 nC
  • Power Dissipation
    500 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Artificial Intelligence, Commercial, Industrial
  • RoHS Compliant
  • Package Type
    Surface Mount
  • Package
  • Applications
    Server and telecom power supplies, Switch mode power supplies (SMPS), Power factor correction power supplies (PFC), Lighting:High-intensity discharge (HID, Fluorescent ballast lighting, Industrial: Welding, Induction heating. Motor drives, Battery chargers and Solar (PV inverters)

Technical Documents