SiJ494DP-T1-GE3

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SiJ494DP-T1-GE3 Image

The SiJ494DP-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 36.8 A, Drain Source Resistance 19.3 to 27.2 milliohm, Drain Source Breakdown Voltage 150 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2.5 to 4.5 V. Tags: Surface Mount. More details for SiJ494DP-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiJ494DP-T1-GE3
  • Manufacturer
    Vishay
  • Description
    -20 to 20 V, 16.1 to 31 nC, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    36.8 A
  • Drain Source Resistance
    19.3 to 27.2 milliohm
  • Drain Source Breakdown Voltage
    150 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2.5 to 4.5 V
  • Gate Charge
    16.1 to 31 nC
  • Power Dissipation
    69.4 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8L
  • Applications
    Primary Side Switching, Synchronous Rectification, DC/AC Inverters, LED Backlighting, High Current Switching

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