The SiJK140E-T1-GE3 from Vishay is an N-Channel Enhancement Mode Power MOSFET that is ideal for synchronous rectification, automation, OR-ing and hot swap switch, power supplies, motor drive control, and battery management applications. It has a drain-source breakdown voltage of over 40 V, a gate threshold voltage of up to 3.5 V, and a drain-source on-resistance of less than 47 milli-ohms. This MOSFET employs fifth-generation TrenchFET technology, which offers features such as low drain-source on-state resistance and high current capability while improving switching performance to deliver high efficiency. It is available in a surface-mount package that measures 11.68 x 9.9 mm.
