SiR606BDP-T1-RE3

Note : Your request will be directed to Vishay.

SiR606BDP-T1-RE3 Image

The SiR606BDP-T1-RE3 from Vishay is a MOSFET with Continous Drain Current 38.7 A, Drain Source Resistance 14.5 to 20.5 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiR606BDP-T1-RE3 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SiR606BDP-T1-RE3
  • Manufacturer
    Vishay
  • Description
    100 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    38.7 A
  • Drain Source Resistance
    14.5 to 20.5 milliohm
  • Drain Source Breakdown Voltage
    100 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    15.1 to 30 nC
  • Power Dissipation
    62.5 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Synchronous rectification, Primary side switch, DC/DC converters, Power supplies, Motor drive control

Technical Documents