SiR616DP-T1-GE3

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SiR616DP-T1-GE3 Image

The SiR616DP-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 20.2 A, Drain Source Resistance 42 to 53.5 milliohm, Drain Source Breakdown Voltage 200 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Surface Mount. More details for SiR616DP-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiR616DP-T1-GE3
  • Manufacturer
    Vishay
  • Description
    200 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    20.2 A
  • Drain Source Resistance
    42 to 53.5 milliohm
  • Drain Source Breakdown Voltage
    200 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    2 to 4 V
  • Gate Charge
    18.3 to 36 nC
  • Power Dissipation
    52 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Fixed telecom, DC/DC converter, Primary and secondary side switch, Synchronous rectification

Technical Documents