SiR638DP-T1-GE3

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The SiR638DP-T1-GE3 from Vishay is a MOSFET with Continous Drain Current 100 A, Drain Source Resistance 0.73 to 1.16 milliohm, Drain Source Breakdown Voltage 40 V, Gate Source Voltage -16 to 20 V, Gate Source Threshold Voltage 1.1 to 2.3 V. Tags: Surface Mount. More details for SiR638DP-T1-GE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    SiR638DP-T1-GE3
  • Manufacturer
    Vishay
  • Description
    40 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Single
  • Continous Drain Current
    100 A
  • Drain Source Resistance
    0.73 to 1.16 milliohm
  • Drain Source Breakdown Voltage
    40 V
  • Gate Source Voltage
    -16 to 20 V
  • Gate Source Threshold Voltage
    1.1 to 2.3 V
  • Gate Charge
    63 to 204 nC
  • Power Dissipation
    104 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAK SO-8
  • Applications
    Synchronous rectification, OR-ing, High power density DC/DC, VRMs and embedded DC/DC, DC/AC inverters, Load switch

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