The SIZF5300DT-T1-GE3 from Vishay is a Symmetrical Dual N-Channel Power MOSFET that is ideal for synchronous buck converters, computers, server peripherals, half-bridge, POL, and telecom DC/DC applications. It has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of up to 2 V, and a drain-source on-resistance of less than 2.43 milli-ohms. This power MOSFET has a continuous drain current of up to 125 A and power dissipation of less than 56.8 W. It is based on Vishay’s TrenchFET Gen V platform and is built using flip-chip technology that results in an optimal thermal design. The RoHS-compliant MOSFET is optimized at both the high side and low side to achieve a duty cycle of 50% while providing an optimal figure of merit (FOM) that improves efficiency for high-frequency switching applications. It is available in a surface-mount package that measures 3.30 x 3.30 mm.