SIZF5300DT-T1-GE3

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SIZF5300DT-T1-GE3 Image

The SIZF5300DT-T1-GE3 from Vishay is a Symmetrical Dual N-Channel Power MOSFET that is ideal for synchronous buck converters, computers, server peripherals, half-bridge, POL, and telecom DC/DC applications. It has a drain-source breakdown voltage of over 30 V, a gate threshold voltage of up to 2 V, and a drain-source on-resistance of less than 2.43 milli-ohms. This power MOSFET has a continuous drain current of up to 125 A and power dissipation of less than 56.8 W. It is based on Vishay’s TrenchFET Gen V platform and is built using flip-chip technology that results in an optimal thermal design. The RoHS-compliant MOSFET is optimized at both the high side and low side to achieve a duty cycle of 50% while providing an optimal figure of merit (FOM) that improves efficiency for high-frequency switching applications. It is available in a surface-mount package that measures 3.30 x 3.30 mm.

Product Specifications

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Product Details

  • Part Number
    SIZF5300DT-T1-GE3
  • Manufacturer
    Vishay
  • Description
    30 V Symmetrical Dual N-Channel Power MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Dimensions
    3.30 x 3.30 mm
  • Number of Channels
    Dual
  • Continous Drain Current
    125 A
  • Drain Source Resistance
    0.00243 ohm
  • Drain Source Breakdown Voltage
    30 V
  • Gate Source Voltage
    16 V
  • Gate Source Threshold Voltage
    2 V
  • Gate Charge
    21 nC
  • Power Dissipation
    56.8 W
  • Temperature operating range
    -55 to 150 Degree C
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    PowerPAIR
  • Applications
    Synchronous buck, Computer / server peripherals, Half bridge, POL, Telecom DC/DC

Technical Documents