GAP3SLT33-214 Image


Note : Your request will be directed to GeneSiC Semiconductor.

The GAP3SLT33-214 from GeneSiC Semiconductor is a Power Diode with Forward Current 0.3 A, Forward Voltage 1.5 to 2.2 V, Reverse Current 1 to 100 uA, Reverse Voltage 3300 V, Repetitive Peak Reverse Voltage 3300 V. Tags: Surface Mount. More details for GAP3SLT33-214 can be seen below.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    1.5 to 2.2 V Schottky Barrier Diode


  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
  • Forward Current
    0.3 A
  • Forward Voltage
    1.5 to 2.2 V
  • Reverse Current
    1 to 100 uA
  • Reverse Voltage
    3300 V
  • Repetitive Peak Reverse Voltage
    3300 V
  • Non-Repetitive Peak Forward Current
    1 to 2 A
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
  • Temperature operating range
    -55 to 175 Degree C
  • Applications
    Medical Imaging, High Voltage Sensing, Oil Driling, Geothermal Instrumentation, High Voltage Multipiles, High Frequencey Rectifiers.
  • Package Type
    Surface Mount
  • Package

Technical Documents

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