GB01SLT12-252 Image

GB01SLT12-252

Note : Your request will be directed to GeneSiC Semiconductor.

The GB01SLT12-252 from GeneSiC Semiconductor is a Power Diode with Forward Current 1 to 4 A, Forward Voltage 1.5 to 1.9 V, Reverse Current 1 to 5 uA, Reverse Voltage 1200 V, Repetitive Peak Reverse Voltage 1200 V. Tags: Surface Mount. More details for GB01SLT12-252 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GB01SLT12-252
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    1.5 to 1.9 V Schottky Barrier Diode

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
    SiC
  • Forward Current
    1 to 4 A
  • Forward Voltage
    1.5 to 1.9 V
  • Reverse Current
    1 to 5 uA
  • Reverse Voltage
    1200 V
  • Repetitive Peak Reverse Voltage
    1200 V
  • Non-Repetitive Peak Forward Current
    8 to 10 A
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Applications
    High Voltage Sensing, Solar Inverters, Electric Vehicles, High Frequency Converters, Battery Chargers, Auxiliary Power Supplies, Anti-Parallel/ Free-Wheeling Diode, LED And HID Lighting
  • Package Type
    Surface Mount
  • Package
    TO-252-2

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