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IDW30G120C5B Image

The IDW30G120C5B from Infineon Technologies is a SiC Schottky Barrier Diode that is ideal for power factor correction, motor drives, solar inverters, and uninterruptable power supply (UPS) applications. It has a forward voltage of 1.7 V and a forward current of up to 44 A. This diode has a reverse current of 17 µA. It has a repetitive peak reverse voltage of up to 1200 V and a non-repetitive peak forward current of less than 1230 A. This diode is based on the 5th generation CoolSiC technology that offers improved system efficiency over traditional Silicon-based diodes. It exhibits temperature-independent switching behavior that results in excellent thermal performance and extended surge current capability.

The IDW30G120C5B provides a low forward voltage even at high operating temperatures and has a tight forward voltage distribution. This RoHS-compliant Schottky diode is designed to offer an increased power density, optimal size/cost savings due to reduced heatsink requirements, and smaller magnetics, and protects against electromagnetic interference. It is available in a through-hole package that measures 15.70 x 40.60 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V SiC Schottky Barrier Diode for Inverters & UPS Applications


  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Forward Current
    44 A
  • Forward Voltage
    1.7 V
  • Reverse Current
    17 µA
  • Repetitive Peak Reverse Voltage
    1200 V
  • Non-Repetitive Peak Forward Current
    1230 A
  • RoHS Compliant
  • Temperature operating range
    -55 to +175 Degree C
  • Applications
    Solar inverters, Uninterruptable power supplies, Motor drives, Power Factor Correction
  • Dimensions
    15.70 x 40.60 mm
  • Package Type
    Through Hole
  • Package

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