PSC1065KQ

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PSC1065KQ Image

The PSC1065KQ from Nexperia is a Silicon Carbide (SiC) Schottky Diode that has been designed for ultra-high performance, low loss, high-efficiency power conversion applications. It has a forward voltage of 1.5 V and a forward current of up to 10 A. This SiC Schottky diode has a reverse current of 1 µA, a repetitive peak reverse voltage of up to 650 V, and a non-repetitive peak forward current of less than 440 A. It offers temperature-independent capacitive turn-off, and zero forward and recovery switching behavior combined with an outstanding figure of merit. It also has high power density and high non-repetitive peak forward current which results in increased system robustness, reduced EMI, and system miniaturization. This Schottky diode is available in a through-hole package that measures 15.3 x 10 x 4.4 mm and is ideal for switch mode power supply (SMPS), AC-DC and DC-DC converters, battery charging infrastructure, server and telecom power supply, uninterruptible Power Supply (UPS), and photovoltaic inverter applications.

Product Specifications

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Product Details

  • Part Number
    PSC1065KQ
  • Manufacturer
    Nexperia
  • Description
    650 V SiC Schottky Diode for SMPS Applications

General

  • Types of Diode
    Schottky Barrier Diode View all
  • Technology
  • Forward Current
    10 A
  • Forward Voltage
    1.5 V
  • Reverse Current
    1 µA
  • Reverse Voltage
    650 V
  • Repetitive Peak Reverse Voltage
    650 V
  • Non-Repetitive Peak Forward Current
    440 A
  • Applications
    Switch mode power supply (SMPS), AC-DC and DC-DC converters, Battery charging infrastructure, Server and telecom power supply, Uninterruptible Power Supply (UPS), and Photovoltaic inverter applications
  • Dimensions
    15.3 x 10 x 4.4 mm
  • Package Type
    Through Hole View all

Technical Documents