RFN1VWM2S Image

RFN1VWM2S

Note : Your request will be directed to ROHM Semiconductor.

The RFN1VWM2S from ROHM Semiconductor is an Ultrafast Recovery Diode that is designed for general rectification applications. It has a forward current of 1 A and a forward voltage of 0.85 V. This power diode has a reverse voltage of 200 V and a peak forward surge current of 20 A. It provides low forward voltage, low switching loss, and has high current overload capacity. This diode is fabricated using silicon epitaxial planer structure and is available in a surface mount package that measures 180 x 8 mm.

Product Specifications

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Product Details

  • Part Number
    RFN1VWM2S
  • Manufacturer
    ROHM Semiconductor
  • Description
    Ultrafast Recovery Diode for General Rectification

General

  • Types of Diode
    Fast Recovery Diode
  • Configuration of Diode
    Single Diode
  • Forward Current
    1 A
  • Forward Voltage
    0.75 to 0.93 V
  • Reverse Current
    1 uA
  • Reverse Voltage
    200 V
  • Repetitive Peak Reverse Voltage
    200 V
  • Non-Repetitive Peak Forward Current
    20 A
  • Recovery Time
    14 to 25 ns
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Applications
    General Rectification
  • Package Type
    Surface Mount
  • Package
    PMDE

Technical Documents

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