The RLD8BQAB3-00x from ROHM Semiconductor is a High-Power Infrared Laser Diode. It can withstand a reverse voltage of up to 30 V and has a forward current of 50 A. This laser diode has a center pulse wavelength of 905 nm. It employs wavelength stabilization technology and can provide 1 kW peak optical power if all anodes are operated together. This laser diode is available in a surface-mount package that measures 5.60 x 3.30 x 1.75 mm and is ideal for time of flight (TOF) sensor applications.
