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XCEZ6V8 Image

The XCEZ6V8 from Toshiba is an Automotive-Qualified Silicon Epitaxial Zener Diode that is ideal for automotive and voltage surge protection applications. It has an electrostatic discharge voltage of ±30 kV and a peak pulse power of 180 W. This AEC-Q101 qualified planar diode has a peak pulse current of 10 A, a reverse current of up to 3.5 µA and a zener voltage of up to 7.9 V. It has a clamping voltage of 13 V and a dynamic resistance of 0.27 ohms. This power diode is available in a surface-mount package that measures 1.6 x 0.8 x 0.6 mm and is ideal for overvoltage protection of automotive ECUs.

Product Specifications

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Product Details

  • Part Number
    XCEZ6V8
  • Manufacturer
    Toshiba
  • Description
    180 W Automotive-Qualified Silicon Epitaxial Zener Diode

General

  • Types of Diode
    Zener Diode View all
  • Configuration of Diode
    Single Diode View all
  • Technology
    Silicon View all
  • Dynamic Resistance
    0.27 ohm
  • Reverse Current
    0.5 to 1.5 µA
  • Reverse Voltage
    6.4 to 7.2 V
  • Peak Reverse Voltage
    6.4 to 7.2 V
  • Industry
    Automotive, Industrial, Commercial
  • Qualification
    AEC-Q101
  • RoHS Compliant
  • Temperature operating range
    -55 to 150 Degree C
  • Applications
    Voltage surge protection
  • Package Type
    Surface Mount View all
  • Total Capacitance
    88 pF

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