VS-3C04ET07S2L-M3

Power Diode by Vishay (592 more products)

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VS-3C04ET07S2L-M3 Image

The VS-3C04ET07S2L-M3 from Vishay is a PIN SiC Schottky Diode that has been designed to provide an optimal choice for high-speed hard switching and efficient operation over a wide temperature range. It has a forward voltage of 1.3 V and a forward current of less than 4 A. This diode has a reverse voltage of 650 V and a reverse current of 0.2 µA. It has a repetitive peak reverse voltage of up to 650 V and a non-repetitive peak forward current of less than 29 A. This J-STD-020-qualified diode is a majority carrier diode that is fabricated using Schottky technology on Silicon Carbide (SiC) wide band gap material. It utilizes thin wafer technology for improved forward voltage and efficiency. This Schottky diode offers a robust solution for applications that suffer from Silicon’s ultra-fast recovery behavior. It has an MPS structure to ensure a high degree of ruggedness against forward current surge events. This diode is available in a surface-mount package that measures 9.65 x 14.61 mm and is ideal for AC/DC PFC and DC/DC ultra-high frequency output rectification in FBPS and LLC converter applications.

Product Specifications

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Product Details

  • Part Number
    VS-3C04ET07S2L-M3
  • Manufacturer
    Vishay
  • Description
    650 V PIN SiC Schottky Diode

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
    SiC
  • Forward Current
    4 A
  • Forward Voltage
    1.3 V
  • Reverse Current
    0.2 µA
  • Reverse Voltage
    650 V
  • Repetitive Peak Reverse Voltage
    650 V
  • Non-Repetitive Peak Forward Current
    29 A
  • Industry
    Industrial
  • Qualification
    J-STD-020
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Applications
    AC/DC PFC and DC/DC ultra high frequency output rectification in FBPS and LLC converters
  • Dimensions
    9.65 x 14.61 mm
  • Package Type
    Surface Mount
  • Package
    D2PAK

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