The VS-3C04ET07S2L-M3 from Vishay is a PIN SiC Schottky Diode that has been designed to provide an optimal choice for high-speed hard switching and efficient operation over a wide temperature range. It has a forward voltage of 1.3 V and a forward current of less than 4 A. This diode has a reverse voltage of 650 V and a reverse current of 0.2 µA. It has a repetitive peak reverse voltage of up to 650 V and a non-repetitive peak forward current of less than 29 A. This J-STD-020-qualified diode is a majority carrier diode that is fabricated using Schottky technology on Silicon Carbide (SiC) wide band gap material. It utilizes thin wafer technology for improved forward voltage and efficiency. This Schottky diode offers a robust solution for applications that suffer from Silicon’s ultra-fast recovery behavior. It has an MPS structure to ensure a high degree of ruggedness against forward current surge events. This diode is available in a surface-mount package that measures 9.65 x 14.61 mm and is ideal for AC/DC PFC and DC/DC ultra-high frequency output rectification in FBPS and LLC converter applications.