Note : Your request will be directed to STMicroelectronics.

M1F45M12W2-1LA Image

The M1F45M12W2-1LA from STMicroelectronics is an Automotive Qualified MOSFET Power Module that is ideal for on-board charger (OBC) applications. It has a drain-source breakdown voltage of over 1200 V, a gate threshold voltage of 3.1 V, and a drain-source on-resistance of 47.5 milli-ohms. This MOSFET has a continuous drain current of up to 30 A. This module adopts a state-of-the-art four-pack topology with an integrated thermistor (NTC-type), designed specifically for the on-board chargers’ DC/DC converter stage of hybrid and electric vehicles. It incorporates four third-generation Silicon Carbide power MOSFETs, utilizing cutting-edge chip technology to achieve an optimal balance between energy efficiency and high switching frequency operation. 

This MOSFET module empowers engineers to create complex topologies with exceptionally high-power densities, meeting stringent efficiency requirements with ease. It ensures optimal thermal performance with the AlN-insulated substrate, contributing to overall system reliability. This AQG 324-qualified IC prioritizes safety with a specific design featuring grooves on the molding for a high creepage distance, making it suitable for electric vehicle systems that require a right balance of both performance and reliability. It is available in a surface-mount package that measures 44.50 x 27.90 x 5.90 mm.

Product Specifications

View similar products

Product Details

  • Part Number
  • Manufacturer
  • Description
    AQG 324 Qualified MOSFET Power Module for EV Applications


  • Configuration
  • Supply Voltage
    -5 to 18 V
  • Output Current
    30 A
  • Qualification
    AQG 324
  • RoHS Compliant
  • Temperature Operating Range
    -40 to 175 Degree C
  • Industry
  • Applications
    Onboard Chargers
  • Dimensions
    44.50 x 27.90 x 5.90 mm
  • Package Type
    Surface Mount
  • Package

Technical Documents