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The MASTERGAN4L from STMicroelectronics is a Half-Bridge Enhancement-Mode GaN HEMT IC that is ideal for high-frequency resonant converters including LLC, LCC and resonant flyback, active clamp flybacks, switch-mode power supplies, chargers and adapters, PFC, high-voltage DC-DC and DC-AC converters applications. This power management IC requires a supply voltage of 4.75 - 9.5 V. It has a drain-source breakdown voltage of over 650 V, a gate threshold voltage of 1.7 V, and a drain-source on-resistance of 225 milli-ohms. This PMIC has a continuous drain current of up to 6.5 A. The high side in the embedded gate driver of this IC can be easily powered by the integrated bootstrap diode. It features under-voltage lockout (UVLO) protection on VCC (power supply) pin that prevents the power switches from operating in low-efficiency or under voltage mode and includes an interlocking function to avoid cross-conduction. This power IC has an extended operating range across its input pins, allowing for easy interfacing with analog controllers, microcontrollers, and DSP units. It operates over an industrial standard temperature range from -40°C to 125°C. It is available in a standard surface-mount package that measures 9 x 9 mm.

Product Specifications

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Product Details

  • Part Number
  • Manufacturer
  • Description
    Half-Bridge Enhancement Mode GaN HEMT IC


  • Configuration
    GaN-FET, Gate Driver
  • Supply Voltage
    4.75 to 9.5 V
  • Output Current
    12 A
  • RoHS Compliant
  • Temperature Operating Range
    -40 to 125 Degree C
  • Industry
    Commercial, Industrial
  • Applications
    High frequency Resonant Converters including LLC, LCC and Resonant Flyback, Active Clamp Flybacks, Switch-mode power supplies, Chargers and adapters, PFC, High-voltage DC-DC and DC-AC Conver
  • Dimensions
    9 x 9 mm
  • Package Type
    Surface Mount
  • Package

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