The report aims to provide a comprehensive view of the power SiC patent landscape along the whole supply chain/value chain, which has been split into the following 5 main categories and 10 main sub-categories:
More in detail, the patent landscape analysis provides an overview of the power SiC patent landscape:
- To describe global patenting trends (time evolution of patent filings, geographical evolution of patent filings);
- To identify the main IP players and the newcomers in the different segments of the supply chain;
- To determine the status of their patenting activity (active/inactive) and their dynamics (ramping up, slowing down, steady);
- To identify the IP collaborations (patent co-filings) and IP transfers (changes of patent ownership) in the power SiC patent landscape;
- To provide a detailed picture of the Chinese SiC ecosystem focusing on the patenting activity of Chinese entities.
In addition, the patent landscape analysis includes IP profiles, which provide an overview of the patent portfolios and the recent patenting activity of the top 10 IP players and top 6 power device market players.
1. INTRODUCTION
- Context of the report
- Description of the report
- Scope and objectives of the study
2. METHODOLOGY
- Patent search, selection, and analysis
- Terminology for patent analysis
3. EXECUTIVE SUMMARY
- Patent landscape overview
- Focus on China
4. PATENT LANDSCAPE ANALYSIS
- SiC substrate − Bulk and bare wafers − Epitaxial substrates
- SiC power devices − MOSFET − Diodes
- SiC power modules
- SiC circuits
5. IP PROFILES OF KEY PLAYERS
- Mitsubishi Electric
- Sumitomo Electric
- Infineon
- Rohm semiconductor
- Toyota & Denso
- Wolfspeed
- Fuji Electric
- Hitachi
- Toshiba
- STMicroelectronics
- onsemi
- Panasonic
6. KNOWMADE PRESENTATION
