GaN Power Transistors - Nexperia

13 GaN Power Transistors from Nexperia meet your specification.

GaN Power Transistors from Nexperia are listed on everything PE. We have compiled a list of GaN Power Transistors from the Nexperia website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Nexperia and their distributors in your region.

Selected Filters Reset All
  • Manufacturers : Nexperia
Description:650 V, 60 to 135 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
60 to 135 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
58 A
Total Charge:
6.2 nC
Input Capacitance:
225 pF
Output Capacitance:
70 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
5 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8080-8
Applications:
High power density and high efficiency power conve...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:650 V, 106 to 230 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
2 A
Pulsed Drain Current:
1 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8080-8
Applications:
High power density and high efficiency power conve...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:150 V, 5.6 to 7 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 12.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
5.6 to 7 milli-ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
120 A
Total Charge:
7.6 nC
Input Capacitance:
865 pF
Output Capacitance:
280 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SOT8073-1
Applications:
High power density and high efficiency power conve...
Dimensions:
3.2 x 2.2 x 0.774 mm
more info
Description:650 V, 106 to 230 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5060-5
Applications:
High power density and high efficiency power conve...
Dimensions:
5.6 x 0.9 mm
more info
Description:650 V, 138 to 300 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8080-8
Applications:
High power density and high efficiency power conve...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:650 V, 138 to 300 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
138 to 300 milli-ohm
Continous Drain Current:
11.5 A
Pulsed Drain Current:
20.5 A
Total Charge:
2.8 nC
Input Capacitance:
96 pF
Output Capacitance:
30 pF
Turn-on Delay Time:
1.4 ns
Turn-off Delay Time:
1.7 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5060-5
Applications:
High power density and high efficiency power conve...
Dimensions:
5 x 6 x 0.9 mm
more info
Description:100 V Enhancement Mode GaN FET for Telecom Applications
Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
230 A
Total Charge:
9.2 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
wafer
Package:
WLCSP8
Applications:
High power density and high efficiency power conve...
Dimensions:
3.5 mm x 2.13 mm
more info
Description:650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
Configuration:
Single
Gate Threshold Voltage:
2.2 to 4.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
35 to 41 milli-ohm
Continous Drain Current:
33.4 to 47.2 A
Total Charge:
22 nc
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Turn-on Delay Time:
14 ns
Turn-off Delay Time:
36 ns
Rise Time:
14 ns
Fall Time:
17 ns
Temperature operating range:
-55 to +175 °C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Hard and soft switching converters for industrial ...
Dimensions:
20.45 x 15.6 x 4.95 mm
more info
Description:650 V GaN Power Transistor for Industrial and Datacom Power
Configuration:
Single
Gate Threshold Voltage:
2.2 to 4.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 60 milli-ohm
Continous Drain Current:
24.4 to 34.5 A
Total Charge:
15 nc
Input Capacitance:
1000 pF
Output Capacitance:
130 pF
Turn-on Delay Time:
57 ns
Turn-off Delay Time:
88 ns
Rise Time:
10 ns
Fall Time:
11 ns
Temperature operating range:
-55 to +175 °C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Hard and soft switching converters for industrial ...
Dimensions:
20.45 x 15.6 x 4.95 mm
more info
Description:AEC-Q100 Qualified GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
4 V
Drain Source Voltage:
650 V
Drain Source Resistance:
33 milli-ohm
Continous Drain Current:
60 A
Total Charge:
30 nc
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Temperature operating range:
-55 to +175 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CCPAK
Applications:
Hard and soft switching converters for industrial ...
Dimensions:
12 x 12 x 2.5 mm
more info
Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.