GaN Power Transistors - Alpha & Omega Semiconductor

1 GaN Power Transistors from Alpha & Omega Semiconductor meet your specification.

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  • Manufacturers : Alpha & Omega Semiconductor
Description:650 V N-Channel Enhancement Mode GaN Transistor
Configuration:
Single
Gate Threshold Voltage:
1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
90 milli-ohm
Continous Drain Current:
16 A
Total Charge:
6.9 nC
Input Capacitance:
203 pF
Output Capacitance:
58 pF
Turn-on Delay Time:
2.4 ns
Turn-off Delay Time:
6.2 ns
Rise Time:
5.4 ns
Fall Time:
14.2 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Server Power Supplies, High-Frequency Converters, ...
Dimensions:
8 x 8 mm
more info
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