GaN Power Transistors - Alpha & Omega Semiconductor

1 GaN Power Transistors from Alpha & Omega Semiconductor meet your specification.

GaN Power Transistors from Alpha & Omega Semiconductor are listed on everything PE. We have compiled a list of GaN Power Transistors from the Alpha & Omega Semiconductor website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Alpha & Omega Semiconductor and their distributors in your region.

Selected Filters Reset All
  • Manufacturers : Alpha & Omega Semiconductor
Description:650 V N-Channel Enhancement Mode GaN Transistor
Gate Threshold Voltage:
1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
90 milli-ohm
Continous Drain Current:
16 A
Total Charge:
6.9 nC
Input Capacitance:
203 pF
Output Capacitance:
58 pF
Turn-on Delay Time:
2.4 ns
Turn-off Delay Time:
6.2 ns
Rise Time:
5.4 ns
Fall Time:
14.2 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Package Type:
Surface Mount
Server Power Supplies, High-Frequency Converters, ...
8 x 8 mm
more info
Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.