GaN Power Transistors - Efficient Power Conversion

91 GaN Power Transistors from Efficient Power Conversion meet your specification.

GaN Power Transistors from Efficient Power Conversion are listed on everything PE. We have compiled a list of GaN Power Transistors from the Efficient Power Conversion website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Efficient Power Conversion and their distributors in your region.

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  • Manufacturers : Efficient Power Conversion
Description:100 V, 2.4 to 3.2 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
231 A
Total Charge:
17.8 nC
Input Capacitance:
2703 pF
Output Capacitance:
659 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, BLDC Motor Drives, Sync Rectific...
Dimensions:
3.5 x 1.95 mm
more info
Description:200 V, 32 to 43 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
32 to 43 milli-ohm
Continous Drain Current:
3 A
Pulsed Drain Current:
32 A
Total Charge:
4.3 nC
Input Capacitance:
573 pF
Output Capacitance:
134 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Wireless Power Transf...
Dimensions:
1.3 x 1.3 mm
more info
Description:100 V, 18 to 23 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
18 to 23 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
34 A
Total Charge:
2.5 nC
Input Capacitance:
386 pF
Output Capacitance:
123 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC from 48 V–60 V input, ToF mod...
Dimensions:
1.3 x 0.85 mm
more info
Description:100 V, 7 to 10.5 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
7 to 10.5 milli-ohm
Continous Drain Current:
9.4 A
Pulsed Drain Current:
89 A
Total Charge:
5.5 nC
Input Capacitance:
664 pF
Output Capacitance:
294 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
48 V Servers, Lidar/Pulsed Power, Isolated Power S...
Dimensions:
2.15 x 1.25 mm
more info
Description:100 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1 milli-ohm
Continous Drain Current:
101 A
Pulsed Drain Current:
519 A
Total Charge:
28 nC
Input Capacitance:
4094 pF
Output Capacitance:
1147 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
Surface Mount
Applications:
High Power PSU AC-DC Synchronous Rectification, Hi...
Dimensions:
3 x 5 mm
more info
Description:40 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.3 milli-ohm
Continous Drain Current:
69 A
Pulsed Drain Current:
409 A
Total Charge:
17.1 nC
Input Capacitance:
2178 pF
Output Capacitance:
1071 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High frequency DC-DC Converters, BLDC Motor Drives...
Dimensions:
2.85 x 3.25 mm
more info
Description:40 V Radiation-Hard GaN Power Transistor
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
8.5 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
62 A
Package Type:
Die
Applications:
For Space Applications such as DC-DC power, Motor ...
Dimensions:
1.7 x 1.1 mm
more info
Description:Radiation Hard GaN Power Transistor for Satellite Applications
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
2.1 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
250 A
Package Type:
Die
Applications:
Radiation hard motor drives, Deep space probes, Hi...
Dimensions:
4.1 x 1.6 mm
more info
Description:100 V Radiation Hardened E-Mode GaN Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
30 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
42 A
Total Charge:
1.8 nC
Input Capacitance:
230 pF
Output Capacitance:
119 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Space applications: DC-DC power, motor drives, lid...
Dimensions:
1.7 mm x 1.1 mm
more info
Description:200 V Radiation Hard Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
11 milli-ohm
Continous Drain Current:
39 A
Pulsed Drain Current:
170 A
Total Charge:
11.7 nC
Input Capacitance:
1137 pF
Output Capacitance:
494 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Space applications: DC-DC power, motor drives, lid...
Dimensions:
4.6 x 2.6 mm
more info
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