GaN Power Transistors - GaN Systems

27 GaN Power Transistors from GaN Systems meet your specification.

GaN Power Transistors from GaN Systems are listed on everything PE. We have compiled a list of GaN Power Transistors from the GaN Systems website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to GaN Systems and their distributors in your region.

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  • Manufacturers : GaN Systems
Description:650 V, 150 to 380 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 o 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
150 to 380 milli-ohm
Continous Drain Current:
11 A
Pulsed Drain Current:
19 A
Total Charge:
2.2 nC
Input Capacitance:
70 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
8 ns
Rise Time:
5 ns
Fall Time:
10 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
Consumer and Industrial Power Supplies, Power Adap...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:650 V, 150 to 380 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 o 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
150 to 380 milli-ohm
Continous Drain Current:
11 A
Pulsed Drain Current:
19 A
Total Charge:
2.2 nC
Input Capacitance:
70 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
8 ns
Rise Time:
5 ns
Fall Time:
10 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
Consumer and Industrial Power Supplies, Power Adap...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:650 V, 78 to 197 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 o 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
78 to 197 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
35 A
Total Charge:
4 nC
Input Capacitance:
132 pF
Output Capacitance:
34 pF
Turn-on Delay Time:
1.5 ns
Turn-off Delay Time:
2.9 ns
Rise Time:
5 ns
Fall Time:
4.8 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
Consumer and Industrial Power Supplies, Power Adap...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:650 V, 78 to 197 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 o 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
78 to 197 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
35 A
Total Charge:
4 nC
Input Capacitance:
132 pF
Output Capacitance:
34 pF
Turn-on Delay Time:
1.5 ns
Turn-off Delay Time:
2.9 ns
Rise Time:
5 ns
Fall Time:
4.8 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
Consumer and Industrial Power Supplies, Power Adap...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:650 V, 50 to 127 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 o 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 127 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
Total Charge:
6.7 nC
Input Capacitance:
235 pF
Output Capacitance:
60 pF
Turn-on Delay Time:
8.2 ns
Turn-off Delay Time:
10.8 ns
Rise Time:
6.3 ns
Fall Time:
5.7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
Bridgeless Totem Pole PFC, Consumer, Industrial an...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:650 V, 50 to 127 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 o 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 127 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
Total Charge:
6.7 nC
Input Capacitance:
235 pF
Output Capacitance:
60 pF
Turn-on Delay Time:
8.2 ns
Turn-off Delay Time:
10.8 ns
Rise Time:
6.3 ns
Fall Time:
5.7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
Bridgeless Totem Pole PFC, Consumer, Industrial an...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:650 V, 10 milli-ohm, GaN Transistor
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
10 milli-ohm
Continous Drain Current:
150 A
Total Charge:
33 nC
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, AC-DC Converters...
Dimensions:
12.6 x 5.6 mm
more info
Description:650 V Enhancement Mode GaN-on-Si Power Transistor
Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
65 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 ns
Turn-off Delay Time:
9.8 ns
Rise Time:
8.5 ns
Fall Time:
7.7 ns
Temperature operating range:
-55 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
AC-DC Converters, DC-DC Converters, Bridgeless Tot...
Dimensions:
9.2 x 7.8 mm
more info
Description:650 V GaN-on-Si Transistor for Wireless Power Applications
Configuration:
Single
Industry:
Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
65 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 ns
Turn-off Delay Time:
9.8 ns
Rise Time:
8.5 ns
Fall Time:
7.7 ns
Temperature operating range:
-55 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
AC-DC Converters, DC-DC Converters, Bridgeless Tot...
Dimensions:
11.0 x 9.0 mm
more info
Description:650 V Enhancement Mode GaN Transistor
Configuration:
Single
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
200 to 516 milli-ohm
Continous Drain Current:
6.3 to 7.5 A
Pulsed Drain Current:
15 A
Total Charge:
1.6 nC
Input Capacitance:
60 pF
Output Capacitance:
17 pF
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
AC-DC Converters, DC-DC Converters, Uninterruptibl...
Dimensions:
5.0 x 6.6 x 0.51 mm
more info
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