GaN Power Transistors - GaN Systems

20 GaN Power Transistors from GaN Systems meet your specification.
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  • Manufacturers : GaN Systems
Description:100 V Enhancement Mode GaN-on-Silicon Power Transistor
Configuration:
Single
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
100 V
Drain Source Resistance:
16 milli-ohm
Continous Drain Current:
38 A
Pulsed Drain Current:
60 A
Total Charge:
3.3 nC
Input Capacitance:
260 pF
Output Capacitance:
110 pF
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
Enterprise and networking power, UPS, industrial m...
Dimensions:
4.6 x 4.4 x 0.51 mm
more info
Description:100 V E-Mode GaN Power Transistor for Charging Applications
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
100 V
Drain Source Resistance:
7 milliohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
Energy Storage Systems, AC-DC Converters (secondar...
Dimensions:
7.6 x 4.6 mm
more info
Description:100 V GaN-on-Si Power Transistor for Wireless Applications
Configuration:
Single
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
100 V
Drain Source Resistance:
9.5 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
Energy Storage Systems, AC-DC Converters (secondar...
Dimensions:
7 x 4 mm
more info
Description:650 V Enhancement Mode GaN Transistor
Configuration:
Single
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
450 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
7.1 A
Total Charge:
0.8 nC
Input Capacitance:
26 pF
Output Capacitance:
7 pF
Turn-on Delay Time:
4 ns
Turn-off Delay Time:
6.5 ns
Rise Time:
3 ns
Fall Time:
11.5 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
PDFN
Applications:
Power adapters, LED lighting drivers, fast battery...
Dimensions:
5.0 x 6.0 x 0.85 mm
more info
Description:650 V Enhancement Mode GaN Transistor
Configuration:
Single
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
225 to 569 milli-ohm
Continous Drain Current:
5 to 8 A
Pulsed Drain Current:
13.5 A
Total Charge:
1.6 nC
Input Capacitance:
54 pF
Output Capacitance:
14 pF
Turn-on Delay Time:
2.4 ns
Turn-off Delay Time:
6 ns
Rise Time:
4.8 ns
Fall Time:
8 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
PDFN
Applications:
Power adapters, LED lighting drivers, fast battery...
Dimensions:
5.0 x 6.0 x 0.85 mm
more info
Description:650 V Enhancement Mode GaN Transistor
Configuration:
Single
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
150 to 380 milli-ohm
Continous Drain Current:
7.2 to 11 A
Pulsed Drain Current:
19 A
Total Charge:
2.2 nC
Input Capacitance:
70 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
8 ns
Rise Time:
5 ns
Fall Time:
10 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
PDFN
Applications:
Power adapters, LED lighting drivers, fast battery...
Dimensions:
5.0 x 6.0 x 0.85 mm
more info
Description:650 V Enhancement Mode GaN Transistor
Configuration:
Single
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
200 to 516 milli-ohm
Continous Drain Current:
6.3 to 7.5 A
Pulsed Drain Current:
15 A
Total Charge:
1.6 nC
Input Capacitance:
60 pF
Output Capacitance:
17 pF
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
AC-DC Converters, DC-DC Converters, Uninterruptibl...
Dimensions:
5.0 x 6.6 x 0.51 mm
more info
Description:650 V Enhancement Mode GaN Transistor
Configuration:
Single
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
100 to 258 milli-ohm
Continous Drain Current:
12.5 to 15 A
Pulsed Drain Current:
30 A
Total Charge:
3.3 nC
Input Capacitance:
120 pF
Output Capacitance:
31 pF
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
AC-DC Converters, DC-DC Converters, Uninterruptibl...
Dimensions:
5.0 x 6.6 x 0.51 mm
more info
Description:650 V Enhancement Mode GaN Transistor
Configuration:
Single
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
67 to 175 milli-ohm
Continous Drain Current:
18 to 22.5 A
Pulsed Drain Current:
48 A
Total Charge:
4.5 nC
Input Capacitance:
185 pF
Output Capacitance:
49 pF
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
AC-DC Converters, DC-DC Converters, Uninterruptibl...
Dimensions:
5.6 x 4.5 x 0.54 mm
more info
Description:650 V Enhancement Mode GaN Transistor
Configuration:
Single
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 129 milli-ohm
Continous Drain Current:
25 to 30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.1 ns
Turn-off Delay Time:
8 ns
Rise Time:
3.7 ns
Fall Time:
5.2 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
GaNPX
Applications:
AC-DC Converters, DC-DC Converters, Uninterruptibl...
Dimensions:
7.1 x 8.5 x 0.5 mm
more info

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Configuration

Industry

Gate Threshold Voltage (V)

Drain Source Voltage (V)

Drain Source Resistance (milli-ohm)

Continous Drain Current (A)

Pulsed Drain Current (A)

Total Charge (nC)

Qualification

RoHS Compliant

Package Type

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