GaN Power Transistors - Wise-integration

5 GaN Power Transistors from Wise-integration meet your specification.

GaN Power Transistors from Wise-integration are listed on everything PE. We have compiled a list of GaN Power Transistors from the Wise-integration website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Wise-integration and their distributors in your region.

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  • Manufacturers : Wise-integration
Description:650 V, 195 to 380 milli-ohm, GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
9 A
Total Charge:
1.9 nC
Input Capacitance:
53.5 pF
Output Capacitance:
13.3 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
6 x 8 mm
more info
Description:650 V, 195 to 380 milli-ohm, GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
9 A
Total Charge:
1.9 nC
Input Capacitance:
53.5 pF
Output Capacitance:
13.3 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
6 x 8 mm
more info
Description:650 V, 195 to 380 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
8 A
Total Charge:
2.75 nC
Input Capacitance:
96.8 pF
Output Capacitance:
21.9 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
8 x 8 mm
more info
Description:650 V, 195 to 380 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
8 A
Total Charge:
2.75 nC
Input Capacitance:
96.8 pF
Output Capacitance:
21.9 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
8 x 8 mm
more info
Description:650 V Enhancement Mode GaN-on-Si Power IC
Configuration:
Half Bridge
Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
113 milli-ohm
Continous Drain Current:
13 A
Total Charge:
2.75 nC
Input Capacitance:
96.8 pF
Output Capacitance:
21.9 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
Surface Mount
Applications:
High efficiency power conversion, High density pow...
Dimensions:
6 x 8 mm
more info
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