GaN Power Transistors - Navitas Semiconductor

7 GaN Power Transistors from Navitas Semiconductor meet your specification.

GaN Power Transistors from Navitas Semiconductor are listed on everything PE. We have compiled a list of GaN Power Transistors from the Navitas Semiconductor website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Navitas Semiconductor and their distributors in your region.

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  • Manufacturers : Navitas Semiconductor
Description:700 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Drain Source Voltage:
700 V
Drain Source Resistance:
238 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
16 A
Total Charge:
17 nC
Output Capacitance:
22 pF
Turn-on Delay Time:
25 ns
Turn-off Delay Time:
22 ns
Rise Time:
12 ns
Fall Time:
7 ns
Temperature operating range:
-40 to 125 degree C
Package Type:
Surface Mount
Package:
PQFN 6 x 8
Applications:
AC-DC, DC-DC, DC-AC, QR flyback, ACF, Buck, Boost,...
Dimensions:
8 x 6 mm
more info
Description:800 V GaN Power IC for Lighting & Telecom Applications
Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
420 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
10 A
Total Charge:
10 nC
Output Capacitance:
11 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
8 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
5 x 6 mm
more info
Description:800 V, 20 A, Single GaN Transistor
Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
70 to 145 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
25 to 40 A
Total Charge:
48 nC
Output Capacitance:
47 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
Description:800 V, 8 A, Single GaN Transistor
Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
175 to 362 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
12 to 16 A
Total Charge:
16 nC
Output Capacitance:
18 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
Description:800 V, 5 A, Single GaN Transistor
Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
300 to 621 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
7.5 to 10 A
Total Charge:
10 nC
Output Capacitance:
11 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
8 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
Description:800 V GaNFast Power IC for Telecom Applications
Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
800 V
Drain Source Resistance:
120 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
24 A
Total Charge:
27 nC
Output Capacitance:
27 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
5 x 6 mm
more info
Description:650 V GaN Power Transistor for Solar Micro-Inverter Applications
Configuration:
Single
Industry:
Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
125 milli-ohm
Continous Drain Current:
12 A
Pulsed Drain Current:
24 A
Total Charge:
27 nC
Output Capacitance:
27 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
9 ns
Rise Time:
6 ns
Fall Time:
3 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Buck, boost, half bridge, full bridge, Mobile fast...
Dimensions:
6 x 8 mm
more info
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