GaN Power Transistors - Renesas

6 GaN Power Transistors from Renesas meet your specification.

GaN Power Transistors from Renesas are listed on everything PE. We have compiled a list of GaN Power Transistors from the Renesas website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Renesas and their distributors in your region.

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  • Manufacturers : Renesas
Description:40V, 65A Enhancement Mode GaN Power Transistors
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
Description:200V, 7.5A Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 to 110 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
2766µm x 950µm (108.90 mils x 37.40 mils) Thicknes...
more info
Description:200 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
Qualification:
MIL-PRF-38535
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
9 x 4.7 x 1.82 mm
more info
Description:40V, 65A Enhancement Mode GaN Power Transistors
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
Description:100 V Radiation Hard GaN Power Transistor for Relay Applications
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
Qualification:
MIL-PRF-38535
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
9.0 x 4.7 mm
more info
Description:100V, 60A Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.7 to 3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
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