GaN Power Transistors - Ancora Semiconductor

5 GaN Power Transistors from Ancora Semiconductor meet your specification.

GaN Power Transistors from Ancora Semiconductor are listed on everything PE. We have compiled a list of GaN Power Transistors from the Ancora Semiconductor website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Ancora Semiconductor and their distributors in your region.

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  • Manufacturers : Ancora Semiconductor
Description:650 V, 122 to 302 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
122 to 302 milli-ohm
Continous Drain Current:
6.6 to 14 A
Pulsed Drain Current:
20.7 to 46.3 A
Total Charge:
2.65 nC
Input Capacitance:
111.84 pF
Output Capacitance:
19.05 pF
Turn-on Delay Time:
1.88 ns
Turn-off Delay Time:
6.7 ns
Rise Time:
3.16 ns
Fall Time:
5.39 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
Description:650 V, 56 to 120 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
56 to 120 milli-ohm
Continous Drain Current:
17.1 to 38.3 A
Pulsed Drain Current:
54.4 to 121.6 A
Total Charge:
5.02 nC
Input Capacitance:
155.3 pF
Output Capacitance:
38.3 pF
Turn-on Delay Time:
3.36 ns
Turn-off Delay Time:
8.76 ns
Rise Time:
3.9 ns
Fall Time:
5.6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
Description:650 V, 64 to 162.5 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
64 to 162.5 milli-ohm
Continous Drain Current:
8.4 to 18.7 A
Pulsed Drain Current:
26.4 to 59.1 A
Total Charge:
5.56 nC
Input Capacitance:
198.8 pF
Output Capacitance:
49.9 pF
Turn-on Delay Time:
2.84 ns
Turn-off Delay Time:
10.44 ns
Rise Time:
4.06 ns
Fall Time:
5.76 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
Description:650 V, 64 to 162.5 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
64 to 162.5 milli-ohm
Continous Drain Current:
9.5 to 21.3 A
Pulsed Drain Current:
30.1 to 67.2 A
Total Charge:
5.38 nC
Input Capacitance:
199.9 pF
Output Capacitance:
49.4 pF
Turn-on Delay Time:
2.34 ns
Turn-off Delay Time:
10.46 ns
Rise Time:
3.35 ns
Fall Time:
6.11 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
Description:650 V, 122 to 302 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
122 to 302 milli-ohm
Continous Drain Current:
6.6 to 14.7 A
Pulsed Drain Current:
20.7 to 46.3 A
Total Charge:
2.65 nC
Input Capacitance:
111.84 pF
Output Capacitance:
19.05 pF
Turn-on Delay Time:
1.88 ns
Turn-off Delay Time:
6.7 ns
Rise Time:
3.16 ns
Fall Time:
5.39 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
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