GaN Power Transistors - ROHM Semiconductor

5 GaN Power Transistors from ROHM Semiconductor meet your specification.

GaN Power Transistors from ROHM Semiconductor are listed on everything PE. We have compiled a list of GaN Power Transistors from the ROHM Semiconductor website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to ROHM Semiconductor and their distributors in your region.

Selected Filters Reset All
  • Manufacturers : ROHM Semiconductor
Description:650 V Enhancement Mode GaN Field Effect Transistor
Gate Threshold Voltage:
1.45 V
Drain Source Voltage:
650 V
Drain Source Resistance:
150 milli-ohm
Continous Drain Current:
11 A
Pulsed Drain Current:
35 A
Total Charge:
2.7 nC
Input Capacitance:
112 pF
Output Capacitance:
19 pF
Turn-on Delay Time:
4.7 ns
Turn-off Delay Time:
6.2 ns
Rise Time:
5.3 ns
Fall Time:
8.3 ns
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
High switching frequency converter, High density c...
Dimensions:
8 x 8 mm
more info
Description:650 V Enhancement Mode GaN Power Transistor
Gate Threshold Voltage:
1.45 V
Drain Source Voltage:
650 V
Drain Source Resistance:
73 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
66 A
Total Charge:
5.2 nC
Input Capacitance:
200 pF
Output Capacitance:
50 pF
Turn-on Delay Time:
5.9 ns
Turn-off Delay Time:
8 ns
Rise Time:
6.9 ns
Fall Time:
8.7 ns
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
High switching frequency converter, High density c...
Dimensions:
8.0 x 8.0 x 0.9 mm
more info
Description:150 V, 55 A, GaN Transistor
Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
8 V
Drain Source Voltage:
150 V
Drain Source Resistance:
15 milli-ohm
Continous Drain Current:
55 A
Total Charge:
4.9 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Dimensions:
5.0 x 6.0 x 1.0 mm
more info
Description:150 V N-Channel Enhancement Mode GaN Transistor
Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
8 V
Drain Source Voltage:
150 V
Drain Source Resistance:
40 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
50 A
Total Charge:
2 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Half Bridge topologies, Synchronous Buck or Boost,...
Dimensions:
5.0 x 6.0 x 1.0 mm
more info
Description:150 V, 80 A, GaN Transistor
Configuration:
Single
Industry:
Industrial, Commercial
Gate Threshold Voltage:
8 V
Drain Source Voltage:
150 V
Drain Source Resistance:
7 milli-ohm
Continous Drain Current:
80 A
Total Charge:
10.2 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Dimensions:
5.0 x 6.0 x 1.0 mm
more info
Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.