GaN Power Transistors - GaNPower International

22 GaN Power Transistors from GaNPower International meet your specification.

GaN Power Transistors from GaNPower International are listed on everything PE. We have compiled a list of GaN Power Transistors from the GaNPower International website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to GaNPower International and their distributors in your region.

Selected Filters Reset All
  • Manufacturers : GaNPower International
Description:900 V, 235 to 580 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
900 V
Drain Source Resistance:
235 to 580 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
11 A
Total Charge:
1.6 nC
Input Capacitance:
39 pF
Output Capacitance:
11.8 pF
Turn-on Delay Time:
40 ns
Turn-off Delay Time:
39 ns
Rise Time:
20 ns
Fall Time:
90 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Server and Telecom P...
Dimensions:
8 x 8 mm
more info
Description:650 V, 170 to 190 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
170 to 190 milli-ohm
Continous Drain Current:
8 A
Total Charge:
2.1 nC
Input Capacitance:
63 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
9 ns
Turn-off Delay Time:
8 ns
Rise Time:
11 ns
Fall Time:
15 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
6 x 8 mm
more info
Description:650 V, 29 to 70 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
29 to 70 milli-ohm
Continous Drain Current:
30 A
Total Charge:
5.8 nC
Input Capacitance:
241 pF
Output Capacitance:
61 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
15 ns
Rise Time:
12 ns
Fall Time:
13 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO263-5L
Applications:
Switching Power Applications, Adapters, Quick Char...
more info
Description:650 V, 170 to 420 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
170 to 420 milli-ohm
Continous Drain Current:
7 A
Pulsed Drain Current:
16 A
Total Charge:
2.1 nC
Input Capacitance:
60 pF
Output Capacitance:
16 pF
Turn-on Delay Time:
4 ns
Turn-off Delay Time:
14 ns
Rise Time:
8 ns
Fall Time:
8 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
8 x 8 mm
more info
Description:650 V, 235 to 580 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
235 to 580 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
11 A
Total Charge:
1.6 nC
Input Capacitance:
39 pF
Output Capacitance:
11.8 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
16 ns
Rise Time:
10 ns
Fall Time:
11 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Server and Telecom P...
Dimensions:
5 x 6 mm
more info
Description:1200 V, 100 to 110 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
1200 V
Drain Source Resistance:
100 to 110 milli-ohm
Continous Drain Current:
15 A
Total Charge:
6.5 nC
Input Capacitance:
124 pF
Output Capacitance:
38 pF
Turn-on Delay Time:
14 ns
Turn-off Delay Time:
15 ns
Rise Time:
43 ns
Fall Time:
16 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO252
Applications:
Switching Power Applications, UPS, Inverters
more info
Description:650 V, 29 to 70 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
29 to 70 milli-ohm
Continous Drain Current:
30 A
Total Charge:
5.8 nC
Input Capacitance:
241 pF
Output Capacitance:
61 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
15 ns
Rise Time:
12 ns
Fall Time:
13 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
8 x 8 mm
more info
Description:650 V, 92 to 110 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
92 to 110 milli-ohm
Continous Drain Current:
15 A
Total Charge:
3.3 nC
Input Capacitance:
123 pF
Output Capacitance:
29 pF
Turn-on Delay Time:
5.3 ns
Turn-off Delay Time:
18 ns
Rise Time:
12 ns
Fall Time:
13 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO 220
Applications:
Switching Power Applications, Adapters, Quick Char...
more info
Description:650 V, 170 to 360 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
650 V
Drain Source Resistance:
170 to 360 milli-ohm
Continous Drain Current:
7 A
Pulsed Drain Current:
16 A
Total Charge:
2.1 nC
Input Capacitance:
76.1 pF
Output Capacitance:
20.9 pF
Turn-on Delay Time:
4 ns
Turn-off Delay Time:
14 ns
Rise Time:
8 ns
Fall Time:
8 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Switching Power Applications, Adapters, Quick Char...
Dimensions:
5 x 6 mm
more info
Description:1200 V, 260 to 320 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 2.9 V
Drain Source Voltage:
1200 V
Drain Source Resistance:
260 to 320 milli-ohm
Continous Drain Current:
5 A
Total Charge:
1.9 nC
Input Capacitance:
90 pF
Output Capacitance:
27.2 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
5 ns
Rise Time:
24 ns
Fall Time:
27 ns
Temperature operating range:
150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO252
Applications:
Switching Power Applications, Server and Telecom P...
more info
Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.