GaN Power Transistors - Tagore Technology

8 GaN Power Transistors from Tagore Technology meet your specification.

GaN Power Transistors from Tagore Technology are listed on everything PE. We have compiled a list of GaN Power Transistors from the Tagore Technology website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Tagore Technology and their distributors in your region.

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  • Manufacturers : Tagore Technology
Description:650 V, 90 to 220 milli-ohm GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
90 to 220 milli-ohm
Continous Drain Current:
12 to 19 A
Pulsed Drain Current:
30 A
Total Charge:
3 nC
Input Capacitance:
110 pF
Output Capacitance:
35 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
Description:650 V, 180 to 440 milli-ohm GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Total Charge:
1.5 nC
Input Capacitance:
55 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
12 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
Description:650 V, 360 to 880 milli-ohm GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
360 to 880 milli-ohm
Continous Drain Current:
4 to 6.5 A
Pulsed Drain Current:
7.5 A
Total Charge:
0.75 nC
Input Capacitance:
28 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
10 ns
Rise Time:
14 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
Description:650 V, 180 to 440 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Output Capacitance:
18 pF
Turn-on Delay Time:
17 ns
Turn-off Delay Time:
23 ns
Rise Time:
11 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
As switching FETs in singles, or in pairs as half-...
Dimensions:
5.7 x 0.85 mm
more info
Description:650 V, 90 to 220 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
90 to 220 milli-ohm
Continous Drain Current:
12 to 19 A
Pulsed Drain Current:
30 A
Total Charge:
3 nC
Input Capacitance:
110 pF
Output Capacitance:
35 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
5.7 x 0.8 mm
more info
Description:650 V, 360 to 880 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
360 to 880 milli-ohm
Continous Drain Current:
4 to 6.5 A
Pulsed Drain Current:
7.5 A
Total Charge:
0.75 nC
Input Capacitance:
28 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
10 ns
Rise Time:
14 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, PFC and inverter a...
Dimensions:
5.7 x 0.8 mm
more info
Description:650 V, 180 to 440 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Total Charge:
1.5 nC
Input Capacitance:
55 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
12 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
5.7 x 0.8 mm
more info
Description:650 V GaN HEMT for Charging Applications
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
180 milli-ohm
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN-22
Applications:
AC-DC Converters, Half Bridge topologies, LED ligh...
Dimensions:
5 x 7 x 0.8 mm
more info
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