GaN Power Transistors - Taiwan Semiconductor

4 GaN Power Transistors from Taiwan Semiconductor meet your specification.

GaN Power Transistors from Taiwan Semiconductor are listed on everything PE. We have compiled a list of GaN Power Transistors from the Taiwan Semiconductor website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Taiwan Semiconductor and their distributors in your region.

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  • Manufacturers : Taiwan Semiconductor
Description:650 V, 150 to 380 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
150 to 380 milli-ohm
Continous Drain Current:
11 A
Pulsed Drain Current:
19 A
Total Charge:
2.2 nC
Input Capacitance:
70 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
5 nS
Turn-off Delay Time:
8 nS
Rise Time:
5 nS
Fall Time:
10 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN56
Applications:
Power Adapters, LED Lighting Drivers, Fast Battery...
more info
Description:650 V, 150 to 380 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
150 to 380 milli-ohm
Continous Drain Current:
11 A
Pulsed Drain Current:
19 A
Total Charge:
2.2 nC
Input Capacitance:
70 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
5 nS
Turn-off Delay Time:
8 nS
Rise Time:
5 nS
Fall Time:
10 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN56
Applications:
Power Adapters, LED Lighting Drivers, Fast Battery...
more info
Description:650 V, 78 to 197 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
78 to 197 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
35 A
Total Charge:
4 nC
Input Capacitance:
132 pF
Output Capacitance:
34 pF
Turn-on Delay Time:
1.5 nS
Turn-off Delay Time:
2.9 nS
Rise Time:
5 nS
Fall Time:
4.8 nS
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN88
Applications:
Consumer and Industrial Power Supplies, Power Adap...
more info
Description:650 V Enhancement Mode GaN Power Transistor
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 milli-ohm
Continous Drain Current:
30 A
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Bridgeless totem-pole PFC, consumer, industrial, a...
Dimensions:
8 x 8 mm
more info
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