GaN Power Transistors - Cambridge GaN Devices

8 GaN Power Transistors from Cambridge GaN Devices meet your specification.

GaN Power Transistors from Cambridge GaN Devices are listed on everything PE. We have compiled a list of GaN Power Transistors from the Cambridge GaN Devices website/catalog and made their products searchable by specification. Use the filters to narrow down on products based on your requirements. Download datasheets and request quotes for products that you find interesting. Your inquiry will be directed to Cambridge GaN Devices and their distributors in your region.

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  • Manufacturers : Cambridge GaN Devices
Description:650 V, 130 to 350 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
130 to 350 milli-ohm
Continous Drain Current:
12 A
Total Charge:
1.9 nC
Output Capacitance:
24 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
8 ns
Rise Time:
6 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
5 x 6 mm
more info
Description:650 V, 240 to 640 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
240 to 640 milli-ohm
Continous Drain Current:
7 A
Total Charge:
1.2 nC
Output Capacitance:
11 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
13 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
5 x 6 mm
more info
Description:650 V, 200 to 530 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
200 to 530 milli-ohm
Continous Drain Current:
8.5 A
Total Charge:
1.4 nC
Output Capacitance:
14 pF
Turn-on Delay Time:
5 ns
Turn-off Delay Time:
13 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
5 x 6 mm
more info
Description:650 V, 130 to 350 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
130 to 350 milli-ohm
Continous Drain Current:
12 A
Total Charge:
2.3 nC
Output Capacitance:
25 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
20 ns
Rise Time:
6 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Server power ...
Dimensions:
5 x 6 mm
more info
Description:650 V, 130 to 350 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.2 to 4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
130 to 350 milli-ohm
Continous Drain Current:
12 A
Total Charge:
1.9 nC
Output Capacitance:
24 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
8 ns
Rise Time:
6 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Mobile charge...
Dimensions:
8 x 8 mm
more info
Description:600 V Enhancement Mode GaN-on-Silicon Power Transistor
Configuration:
Single
Gate Threshold Voltage:
20 V
Drain Source Voltage:
650 V
Drain Source Resistance:
55 milli-ohm
Continous Drain Current:
27 A
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS, and Inverters, AC/DC and DC...
Dimensions:
8 x 8 mm
more info
Description:650 V Enhancement Mode GaN-on-Silicon Power Transistor
Configuration:
Single
Gate Threshold Voltage:
4.2 V
Drain Source Voltage:
650 V
Drain Source Resistance:
350 milli-ohm
Continous Drain Current:
12 A
Total Charge:
2.3 nC
Output Capacitance:
25 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
20 ns
Rise Time:
6 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Server power and data centres, Telecom rectifiers,...
Dimensions:
8 x 8 mm
more info
Description:650 V GaN-on-Si Power Transistor for Data Centers & Gaming Applications
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
77 milli-ohm
Continous Drain Current:
27 A
Total Charge:
6 nC
Output Capacitance:
66 pF
Turn-on Delay Time:
7 ns
Turn-off Delay Time:
26 ns
Rise Time:
7 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
PSUs, Industrial SMPS and inverters, Server power ...
Dimensions:
8 mm x 8 mm
more info
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