Dual GaN Transistors

5 Dual GaN Transistors from 3 Manufacturers meet your specification.

Find & Compare Dual GaN Transistors from multiple manufacturers on everything PE. View product specifications, download datasheets and get pricing. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

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  • Configuration : Dual
Description:120 V GaN Enhancement Transistor
Configuration:
Dual
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
120 V
Drain Source Resistance:
80 to 110 milli-ohm
Continous Drain Current:
3.4 A
Pulsed Drain Current:
20 A
Total Charge:
0.8 to 1.1 nC
Input Capacitance:
85 to 100 pF
Output Capacitance:
45 to 70 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Ultra High Frequency DC-DC Conversion, Wireless Po...
Dimensions:
1.35 x 1.35 mm
more info
Description:40 V, 9 A, Bidirection GaN Transistor
Configuration:
Dual
Industry:
Industrial
Gate Threshold Voltage:
0.8 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
5.5 to 7.8 milli-ohm
Continous Drain Current:
9 A
Pulsed Drain Current:
15 A
Input Capacitance:
845 pF
Output Capacitance:
345 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
WLCSP
Applications:
High side load switch, OVP protection in smart pho...
Dimensions:
2 X 2 mm
more info
Description:100 V, 13.5 A, Dual GaN Transistor
Configuration:
Dual
Industry:
Industrial
Gate Threshold Voltage:
0.8 to 2.4 V
Drain Source Voltage:
100 V
Drain Source Resistance:
19 to 25 milli-ohm
Continous Drain Current:
13.5 A
Pulsed Drain Current:
7 A
Input Capacitance:
307 to 384 pF
Output Capacitance:
150 to 218 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
WLCSP
Applications:
Point of Load Converters, Lidar Application, Class...
Dimensions:
1.58 × 3.58 mm
more info
Description:40 V GaN Power Transistor for Space Applications
Configuration:
Dual
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 milliohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8.0 x 5.6 mm
more info
Description:100 V GaN Power Transistor for Multi-Channel Lidar Applications
Configuration:
Dual
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
58 milliohms
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
0.8 to 1.2 nC
Input Capacitance:
94 to 150 pF
Output Capacitance:
63 to 72 pF
Temperature operating range:
-40 to 150 degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Automotive, High Frequency DC-DC Conversion, Synch...
Dimensions:
1.35 x 1.35 mm
more info

What is a Dual GaN Transistor?

Dual GaN Transistor has two GaN transistors for switching operation. These transistors can be connected in parallel or half-bridge configuration or used as independent FETs with a common source. 

Dual GaN transistors are ideal for use in ultra high-frequency DC-DC Conversion, wireless power transfer, inverters, multilevel inverter, automotive applications, UPS, switching mode power supplies, electronic welders, renewable energy power conversion, and synchronous rectification.

Dual GaN Transistors from the leading manufacturers are listed on everything PE. Our parametric search tool will scan multiple manufacturer websites to identify Dual GaN Transistors that meet your requirement. You can then download datasheets, request quotations via everything PE. Your inquiry will be routed to the manufacturer or their representative who will give you more information on the product.

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Pulsed Drain Current (A)

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