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Dual GaN Transistors

12 Dual GaN Transistors from 6 Manufacturers meet your specification.

Find & Compare Dual GaN Transistors from multiple manufacturers on everything PE. View product specifications, download datasheets and get pricing. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

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  • Configuration : Dual
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Tagore Technology - TP44220HBTRPBF

Dual GaN Transistor from Tagore Technology
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Description:650 V, 180 to 440 milli-ohm GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Total Charge:
1.5 nC
Input Capacitance:
55 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
12 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
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Central Semiconductor - CCSPG0420N

Dual GaN Transistor from Central Semiconductor
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Description:40 V, 20 A, GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
4 to 4.8 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
100 A
Total Charge:
15.8 nC
Input Capacitance:
886.5 pF
Output Capacitance:
381.2 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CSP2X2
more info
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MGT Technology - GPT65Z4YMR

Dual GaN Transistor from MGT Technology
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Description:650 V, 130 to 250 milli-ohm, GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.5 to 4.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
130 to 250 milli-ohm
Continous Drain Current:
11.5 to 18 A
Pulsed Drain Current:
80 A
Total Charge:
38 nC
Input Capacitance:
600 pF
Output Capacitance:
40 pF
Turn-on Delay Time:
44 ns
Turn-off Delay Time:
40 ns
Rise Time:
16 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Battery Chargers, Power Adapters, LED Lighting, AC...
Dimensions:
8 x 8 mm
more info
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Tagore Technology - TP44110HBTRPBF

Dual GaN Transistor from Tagore Technology
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Description:650 V, 90 to 220 milli-ohm GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
90 to 220 milli-ohm
Continous Drain Current:
12 to 19 A
Pulsed Drain Current:
30 A
Total Charge:
3 nC
Input Capacitance:
110 pF
Output Capacitance:
35 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
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Central Semiconductor - CCSPG0450N

Dual GaN Transistor from Central Semiconductor
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Description:40 V, 50 A, GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.3 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
50 A
Pulsed Drain Current:
200 A
Total Charge:
28 nC
Input Capacitance:
3500 pF
Output Capacitance:
1600 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CSP5X4
Applications:
DC-DC conversion, Modules and fast-charging suppli...
more info
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MGT Technology - GPT65Z3YMR

Dual GaN Transistor from MGT Technology
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Description:650 V, 245 to 500 milli-ohm, GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
245 to 500 milli-ohm
Continous Drain Current:
6 to 9 A
Pulsed Drain Current:
31 A
Total Charge:
22 nC
Input Capacitance:
500 pF
Output Capacitance:
20 pF
Turn-on Delay Time:
20 ns
Turn-off Delay Time:
80 ns
Rise Time:
7 ns
Fall Time:
6 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Battery Chargers, Power Adapters, LED Lighting, AC...
Dimensions:
8 x 8 mm
more info
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Tagore Technology - TP44440HBTRPBF

Dual GaN Transistor from Tagore Technology
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Description:650 V, 360 to 880 milli-ohm GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
360 to 880 milli-ohm
Continous Drain Current:
4 to 6.5 A
Pulsed Drain Current:
7.5 A
Total Charge:
0.75 nC
Input Capacitance:
28 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
10 ns
Rise Time:
14 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
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Central Semiconductor - CCSPG1060N

Dual GaN Transistor from Central Semiconductor
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Description:100 V, 60 A, GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 5.5 milli-ohm
Continous Drain Current:
60 A
Total Charge:
9.2 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
CSP3.5X2
Applications:
EV charging stations, Microinverters, and highly e...
more info
EPC2221 Image
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Efficient Power Conversion - EPC2221

Dual GaN Transistor from Efficient Power Conversion
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Description:100 V GaN Power Transistor for Multi-Channel Lidar Applications
Configuration:
Dual
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
58 milliohms
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
0.8 to 1.2 nC
Input Capacitance:
94 to 150 pF
Output Capacitance:
63 to 72 pF
Temperature operating range:
-40 to 150 degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Automotive, High Frequency DC-DC Conversion, Synch...
Dimensions:
1.35 x 1.35 mm
more info
EPC2110 Image
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Efficient Power Conversion - EPC2110

Dual GaN Transistor from Efficient Power Conversion
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Description:120 V GaN Enhancement Transistor
Configuration:
Dual
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
120 V
Drain Source Resistance:
80 to 110 milli-ohm
Continous Drain Current:
3.4 A
Pulsed Drain Current:
20 A
Total Charge:
0.8 to 1.1 nC
Input Capacitance:
85 to 100 pF
Output Capacitance:
45 to 70 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Ultra High Frequency DC-DC Conversion, Wireless Po...
Dimensions:
1.35 x 1.35 mm
more info

What is a Dual GaN Transistor?

Dual GaN Transistor has two GaN transistors for switching operation. These transistors can be connected in parallel or half-bridge configuration or used as independent FETs with a common source. 

Dual GaN transistors are ideal for use in ultra high-frequency DC-DC Conversion, wireless power transfer, inverters, multilevel inverter, automotive applications, UPS, switching mode power supplies, electronic welders, renewable energy power conversion, and synchronous rectification.

Dual GaN Transistors from the leading manufacturers are listed on everything PE. Our parametric search tool will scan multiple manufacturer websites to identify Dual GaN Transistors that meet your requirement. You can then download datasheets, request quotations via everything PE. Your inquiry will be routed to the manufacturer or their representative who will give you more information on the product.

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