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Half Bridge GaN Transistors

10 Half Bridge GaN Transistors from 1 Manufacturer meet your specification.

Find & Compare Half Bridge GaN Transistors from multiple manufacturers on everything PE. View product specifications, download datasheets and get pricing. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

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  • Configuration : Half Bridge
EPC2111 Image
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Efficient Power Conversion - EPC2111

Half Bridge GaN Transistor from Efficient Power Conversion
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Description:30 V GaN Enhancement Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
30 V
Drain Source Resistance:
6 to 19 milli-ohm
Continous Drain Current:
16 A
Pulsed Drain Current:
50 to 140 A
Total Charge:
1.7 to 5.8 nC
Input Capacitance:
190 to 595 pF
Output Capacitance:
170 to 735 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Point-of-Load (POL) Converte...
Dimensions:
3.5 x 1.5 mm
more info
EPC2100 Image
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Efficient Power Conversion - EPC2100

Half Bridge GaN Transistor from Efficient Power Conversion
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Description:30 V Enhancement-Mode GaN Power Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
30 V
Drain Source Resistance:
1.5 to 8.2 milli-ohm
Continous Drain Current:
10 to 40 A
Pulsed Drain Current:
100 to 400 A
Total Charge:
3.6 to 19 nC
Input Capacitance:
395 to 1960 pF
Output Capacitance:
290 to 2060 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Point-of-Load (POL) Converte...
Dimensions:
6.05 x 2.3 mm
more info
EPC2108 Image
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Efficient Power Conversion - EPC2108

Half Bridge GaN Transistor from Efficient Power Conversion
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Description:60 to 100 V Enhancement-Mode GaN Power Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 to 100 V
Drain Source Resistance:
150 to 3300 milli-ohm
Continous Drain Current:
0.5 to 1.7 A
Pulsed Drain Current:
0.5 to 5.5 A
Total Charge:
44 to 310 nC
Input Capacitance:
7 to 31 pF
Output Capacitance:
1.6 to 24 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC conversion, Class-D Audio, Wi...
Dimensions:
1.35 x 1.35 mm
more info
EPC2102 Image
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Efficient Power Conversion - EPC2102

Half Bridge GaN Transistor from Efficient Power Conversion
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Description:60 V Enhancement-Mode GaN Power Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
3.6 to 4.9 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
220 A
Total Charge:
8 to 11 nC
Input Capacitance:
850 to 1020 pF
Output Capacitance:
500 to 915 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC
Dimensions:
6.05 x 2.3 mm
more info
EPC2101 Image
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Efficient Power Conversion - EPC2101

Half Bridge GaN Transistor from Efficient Power Conversion
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Description:60 V Enhancement-Mode GaN Power Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
2 to 11.5 milli-ohm
Continous Drain Current:
10 to 40 A
Pulsed Drain Current:
80 to 350 A
Total Charge:
3.3 to 17 nC
Input Capacitance:
360 to 1720 pF
Output Capacitance:
190 to 1320 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Point-of-Load (POL) Converte...
Dimensions:
6.05 x 2.3 mm
more info
EPC2103 Image
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Efficient Power Conversion - EPC2103

Half Bridge GaN Transistor from Efficient Power Conversion
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Description:80 V Enhancement-Mode GaN Power Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
4 to 5.5 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
195 A
Total Charge:
6.5 to 8 nC
Input Capacitance:
730 to 880 pF
Output Capacitance:
445 to 790 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Motor Drive
Dimensions:
6.05 x 2.3 mm
more info
EPC2105 Image
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Efficient Power Conversion - EPC2105

Half Bridge GaN Transistor from Efficient Power Conversion
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Description:80 V Enhancement-Mode GaN Power Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
80 V
Drain Source Resistance:
2.4 to 14.5 milli-ohm
Continous Drain Current:
10 to 40 A
Pulsed Drain Current:
70 to 300 A
Total Charge:
2.7 to 15 nC
Input Capacitance:
300 to 1410 pF
Output Capacitance:
170 to 1170 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC
Dimensions:
6.05 x 2.3 mm
more info
EPC2107 Image
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Efficient Power Conversion - EPC2107

Half Bridge GaN Transistor from Efficient Power Conversion
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Description:100 V Enhancement-Mode GaN Power Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
250 to 3300 milli-ohm
Continous Drain Current:
0.5 to 1.7 A
Pulsed Drain Current:
0.5 to 3.8 A
Total Charge:
44 to 230 nC
Input Capacitance:
7 to 25 pF
Output Capacitance:
1.6 to 21 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Class-D Audio, Wi...
Dimensions:
1.35 x 1.35 mm
more info
EPC2106 Image
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Efficient Power Conversion - EPC2106

Half Bridge GaN Transistor from Efficient Power Conversion
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Description:100 V Enhancement-Mode GaN Power Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
55 to 70 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
18 A
Total Charge:
730 to 900 nC
Input Capacitance:
79 to 95 pF
Output Capacitance:
52 to 92 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Class-D Audio
Dimensions:
1.35 x 1.35 mm
more info
EPC2104 Image
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Efficient Power Conversion - EPC2104

Half Bridge GaN Transistor from Efficient Power Conversion
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Description:100 V Enhancement-Mode GaN Power Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 6.8 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
180 A
Total Charge:
6.8 to 8.7 nC
Input Capacitance:
730 to 880 pF
Output Capacitance:
430 to 645 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Motor Drive
Dimensions:
6.05 x 2.3 mm
more info

What is a Half-Bridge GaN Transistor?

A half-bridge GaN transistor consists of two identical GaN transistors connected in a half-bridge configuration. These transistors are ideal for use in high-frequency DC-DC, point-of-load (POL) converters, Class-D audio, wireless power transfer, motor drive, traction-motor control, machine tool industries, automobiles, high-frequency switching application, solar inverter, SMPS, and telecommunications.

Key features of Half-Bridge GaN Transistors:

  • Lower transformer winding costs.
  • Full utilization of the transformer core flux.
  • Reduction of the size of output inductor and capacitor.
  • Reduction in EMI when used in inverter applications.

Half Bridge GaN Transistors from the leading manufacturers are listed on everything PE. Our parametric search tool will scan multiple manufacturer websites to identify Half-Bridge GaN Transistors that meet your requirement. You can then download datasheets, request quotations via everything PE. Your inquiry will be routed to the manufacturer or their representative who will give you more information on the product.

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