Half Bridge GaN Transistors

19 Half Bridge GaN Transistors from 4 Manufacturers meet your specification.

Find & Compare Half Bridge GaN Transistors from multiple manufacturers on everything PE. View product specifications, download datasheets and get pricing. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

Selected Filters Reset All
  • Configuration : Half Bridge
Description:600 V, 500 to 1000 milli-ohm GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
500 to 1000 milli-ohm
Continous Drain Current:
3.9 A
Pulsed Drain Current:
6.4 A
Total Charge:
0.58 nC
Input Capacitance:
37.8 pF
Output Capacitance:
7.2 pF
Turn-on Delay Time:
110 ns
Turn-off Delay Time:
110 ns
Rise Time:
170 ns
Fall Time:
90 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Low power motor drives, Low power SMPS
more info
Description:100 V Half-Bridge Solid-GaN Gate Driver for AI Applications
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 milli-ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
230 A
Total Charge:
9.2 to 12 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LGA
Applications:
AI, Server, Telecom, Super Computer, Motor Drive
Dimensions:
5 x 6.5 x 1.12 mm
more info
Description:650 V, 195 to 380 milli-ohm, GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
9 A
Total Charge:
1.9 nC
Input Capacitance:
53.5 pF
Output Capacitance:
13.3 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
6 x 8 mm
more info
Description:650 V, 195 to 380 milli-ohm, GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.9 to 1.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
195 to 380 milli-ohm
Continous Drain Current:
9 A
Total Charge:
1.9 nC
Input Capacitance:
53.5 pF
Output Capacitance:
13.3 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PDFN
Applications:
High efficiency power conversion, High density pow...
Dimensions:
6 x 8 mm
more info
Description:650 V Enhancement Mode GaN-on-Si Power IC
Configuration:
Half Bridge
Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
113 milli-ohm
Continous Drain Current:
13 A
Total Charge:
2.75 nC
Input Capacitance:
96.8 pF
Output Capacitance:
21.9 pF
Temperature operating range:
-40 to 150 Degree C
Package Type:
Surface Mount
Applications:
High efficiency power conversion, High density pow...
Dimensions:
6 x 8 mm
more info
Description:600 V, 200 to 360 milli-ohm GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
200 to 360 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
14.1 A
Total Charge:
1.5 nC
Input Capacitance:
100 pF
Output Capacitance:
19 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Charger and adapters, Server, telecom & networking...
Dimensions:
8 x 8 mm
more info
Description:600 V, 270 to 490 milli-ohm GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
270 to 490 milli-ohm
Continous Drain Current:
4.5 A
Pulsed Drain Current:
12.2 A
Total Charge:
1.2 nC
Input Capacitance:
77 pF
Output Capacitance:
14.6 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Charger and adaptors, Low power motor drive, LED l...
Dimensions:
8 x 8 mm
more info
Description:600 V, 140 to 260 milli-ohm GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Charger and adapters, Server, telecom & networking...
Dimensions:
8 x 8 mm
more info
Description:600 V, 500 to 1000 milli-ohm GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
500 to 1000 milli-ohm
Continous Drain Current:
3.8 A
Pulsed Drain Current:
6.4 A
Total Charge:
0.58 nC
Input Capacitance:
37.8 pF
Output Capacitance:
7.2 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Low power motor drive, LED lighting
Dimensions:
8 x 8 mm
more info
Description:100 V Enhancement-Mode GaN Power Transistor
Configuration:
Half Bridge
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 6.8 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
180 A
Total Charge:
6.8 to 8.7 nC
Input Capacitance:
730 to 880 pF
Output Capacitance:
430 to 645 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC, Motor Drive
Dimensions:
6.05 x 2.3 mm
more info

What is a Half-Bridge GaN Transistor?

A half-bridge GaN transistor consists of two identical GaN transistors connected in a half-bridge configuration. These transistors are ideal for use in high-frequency DC-DC, point-of-load (POL) converters, Class-D audio, wireless power transfer, motor drive, traction-motor control, machine tool industries, automobiles, high-frequency switching application, solar inverter, SMPS, and telecommunications.

Key features of Half-Bridge GaN Transistors:

  • Lower transformer winding costs.
  • Full utilization of the transformer core flux.
  • Reduction of the size of output inductor and capacitor.
  • Reduction in EMI when used in inverter applications.

Half Bridge GaN Transistors from the leading manufacturers are listed on everything PE. Our parametric search tool will scan multiple manufacturer websites to identify Half-Bridge GaN Transistors that meet your requirement. You can then download datasheets, request quotations via everything PE. Your inquiry will be routed to the manufacturer or their representative who will give you more information on the product.

FiltersReset All

Configuration

Industry

Gate Threshold Voltage

Apply

Drain Source Voltage

Apply

Drain Source Resistance

Apply

Continous Drain Current

Apply

Pulsed Drain Current

Apply

Total Charge

Apply

Qualification

RoHS Compliant

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.