Single GaN Transistors

148 Single GaN Transistors from 11 Manufacturers meet your specification.

Find & Compare Single GaN Transistors from multiple manufacturers on everything PE. View product specifications, download datasheets and get pricing. Your Inquiry will be directed to the manufacturer and their distributors who will get back to you with a quote.

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  • Configuration : Single
Description:600 V Enhancement mode GaN power transistor
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20-85
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
Description:600 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-DSO-20-87
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
Description:Gallium nitride CoolGaN™ 600V e-mode power transistor IGT60R070D1 for ultimate efficiency and reliability
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8-3
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
Description:Gallium nitride CoolGaN™ 400V enhancement-mode power transistor IGT40R070D1E8220 for ultimate efficiency and reliability
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
400 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
14 to 31 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
4.5 nC
Input Capacitance:
382 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
11 ns
Rise Time:
7.5 ns
Fall Time:
9 ns
Temperature operating range:
0 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8
Applications:
Class-D Audio Amplifier
more info
Description:Gallium nitride CoolGaN™ 600V enhancement mode power transistor IGT60R190D1S for ultimate efficiency and reliability
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
190 milli-ohm
Continous Drain Current:
5.5 to 12.5 A
Pulsed Drain Current:
13.5 to 23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
12 ns
Rise Time:
5 ns
Fall Time:
12 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-HSOF-8-3
Applications:
Consumer SMPS and high density chargers based on t...
more info
Description:Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R070D1 for ultimate efficiency and reliability
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
70 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
35 to 60 A
Total Charge:
5.8 nC
Input Capacitance:
380 pF
Output Capacitance:
72 pF
Turn-on Delay Time:
15 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
13 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8-1
Applications:
Industrial, telecom, datacenter SMPS based on the ...
more info
Description:Gallium nitride CoolGaN™ 600V e-mode power transistor IGLD60R190D1 for ultimate efficiency and reliability
Configuration:
Single
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
190 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
13.5 to 23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
11 ns
Turn-off Delay Time:
12 ns
Rise Time:
5 ns
Fall Time:
12 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-LSON-8-1
Applications:
Consumer SMPS and high density chargers based on t...
more info
Description:650 V GaN Power Transistor for Datacom & Industrial Applications
Configuration:
Single
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
35 to 72 milli-ohm
Continous Drain Current:
29.5 to 46.5 A
Pulsed Drain Current:
240 A
Total Charge:
22 nc
Input Capacitance:
1500 pF
Output Capacitance:
147 pF
Turn-on Delay Time:
60 ns
Turn-off Delay Time:
94 ns
Rise Time:
10 ns
Fall Time:
10 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
more info
Description:650V 35mΩ AEC-Q101 Qualified GaN FET in TO-247
Configuration:
Single
Gate Threshold Voltage:
3.4 to 4.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
35 to 84 milli-ohm
Continous Drain Current:
33.4 to 47.2 A
Pulsed Drain Current:
240 A
Total Charge:
24 nc
Input Capacitance:
1500 pF
Output Capacitance:
196 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
98 ns
Rise Time:
14 ns
Fall Time:
12 ns
Temperature operating range:
-55 to +175 °C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Automotive, Datacom, Broad industrial, PV inverter
more info
Description:650V 35mΩ GaN FET in TO-247
Configuration:
Single
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
35 to 72 milli-ohm
Continous Drain Current:
29.5 to 46.5 A
Pulsed Drain Current:
240 A
Total Charge:
24 to 36 nc
Input Capacitance:
1500 pF
Output Capacitance:
190 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
98.5 ns
Rise Time:
13.5 ns
Fall Time:
11.5 ns
Temperature operating range:
-55 to +150 °C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-247
Applications:
Datacom, Broad industrial, PV inverter, Servo moto...
more info

What is a Single GaN Transistor?

Single GaN Transistor is a type of configuration of GaN transistor module that has a single GaN transistor for switching operation. These transistors are ideal for use in industrial motor drives, solar power, fast battery charging, class D audio amplifiers, wireless power transfer, datacom, broad industrial, PV inverter, servo motor, high density industrial and consumer power supplies, multi-level converters, solar inverters, uninterruptable power supplies, high voltage battery chargers, high-Speed DC-DC conversion, lidar/pulsed power applications, lidar for augmented reality applications, enterprise and networking power, synchronous buck or boost, and smart home.

Single GaN Transistors from the leading manufacturers are listed on everything PE. Our parametric search tool will scan multiple manufacturer websites to identify Single GaN Transistors that meet your requirement. You can then download datasheets, request quotations via everything PE. Your inquiry will be routed to the manufacturer or their representative who will give you more information on the product.

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Pulsed Drain Current (A)

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