GaN Power Transistors

85 GaN Power Transistors from 4 Manufacturers meet your specification.
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  • Configuration : Single
  • Package Type : Die
Description:15 V GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
15 V
Drain Source Resistance:
20 to 26 milli-ohm
Continous Drain Current:
3.4 A
Pulsed Drain Current:
28 A
Total Charge:
0.87 to 1.1 nC
Input Capacitance:
98 to 118 pF
Output Capacitance:
66 to 99 pF
Temperature operating range:
-40 to +150 °C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Lidar/Pulsed Power Ap...
Dimensions:
0.85 x 1.2 mm
more info
Description:30 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
30 V
Drain Source Resistance:
1.15 to 1.45 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
590 A
Total Charge:
19 to 25 nC
Input Capacitance:
2150 to 2600 pF
Output Capacitance:
1530 to 2300 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load (PO...
Dimensions:
6.05 x 2.3 mm
more info
Description:40 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
80 to 110 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
7.5 A
Total Charge:
370 to 450 nC
Input Capacitance:
45 to 52 pF
Output Capacitance:
23 to 34 pF
Turn-on Delay Time:
.
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
Ultra High Speed DC-DC Conversion, RF Envelope Tra...
Dimensions:
2.1 x 0.85 mm
more info
Description:40 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
12 to 16 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
60 A
Total Charge:
2 to 2.5 nC
Input Capacitance:
220 to 300 pF
Output Capacitance:
150 to 210 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC conversion, Class-D Audio, Wi...
Dimensions:
1.7 x 1.1 mm
more info
Description:40 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.2 to 4 milli-ohm
Continous Drain Current:
53 A
Pulsed Drain Current:
235 A
Total Charge:
8.7 to 11.2 nC
Input Capacitance:
980 to 1180 pF
Output Capacitance:
710 to 1070 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
4.1 x 1.6 mm
more info
Description:40 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3 to 3.6 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
161 A
Total Charge:
6.6 to 8.5 nC
Input Capacitance:
841 to 1111 pF
Output Capacitance:
408 to 612 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
2.5 x 1.5 mm
more info
Description:40 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.8 to 2.4 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
490 A
Total Charge:
17 to 22 nC
Input Capacitance:
1960 to 2360 pF
Output Capacitance:
1120 to 1680 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
4.6 x 2.6 mm
more info
Description:40 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
560 A
Total Charge:
18 to 24 nC
Input Capacitance:
1920 to 2300 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
High Frequency DC-DC Conversion, Point-of-Load Con...
Dimensions:
6.05 x 2.3 mm
more info
Description:60 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
35 to 45 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
24 A
Total Charge:
880 to 1150 nC
Input Capacitance:
95 to 115 pF
Output Capacitance:
60 to 90 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Wireless Power Transf...
Dimensions:
0.9 x 0.9 mm
more info
Description:60 V Enhancement-Mode GaN Power Transistor
Configuration:
Single
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
2 to 2.6 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
450 A
Total Charge:
16 to 21 nC
Input Capacitance:
1640 to 2000 pF
Output Capacitance:
980 to 1500 pF
Temperature operating range:
-40 to +150 °C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC Conversion, Industrial Automa...
Dimensions:
4.6 x 2.6 mm
more info

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