GaN Power Transistors

38 GaN Power Transistors from 3 Manufacturers meet your specification.
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  • Industry : Industrial
  • Manufacturers : Nexperia, Xindao Electronic Technology, Infineon Technologies
Description:600 V, 500 to 1000 milli-ohm GaN Transistor
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
500 to 1000 milli-ohm
Continous Drain Current:
3.9 A
Pulsed Drain Current:
6.4 A
Total Charge:
0.58 nC
Input Capacitance:
37.8 pF
Output Capacitance:
7.2 pF
Turn-on Delay Time:
110 ns
Turn-off Delay Time:
110 ns
Rise Time:
170 ns
Fall Time:
90 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-28
Applications:
Low power motor drives, Low power SMPS
more info
Description:650 V, 60 to 135 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
60 to 135 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
58 A
Total Charge:
6.2 nC
Input Capacitance:
225 pF
Output Capacitance:
70 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
5 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8080-8
Applications:
High power density and high efficiency power conve...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:650 V, 160 to 340 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
160 to 340 milli-ohm
Continous Drain Current:
16 A
Pulsed Drain Current:
21 A
Total Charge:
7.8 nC
Input Capacitance:
378 pF
Output Capacitance:
23 pF
Turn-on Delay Time:
2.5 ns
Turn-off Delay Time:
9.7 ns
Rise Time:
7 ns
Fall Time:
28 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
Description:600 V, 140 to 260 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
12.8 A
Pulsed Drain Current:
23 A
Total Charge:
3.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Turn-on Delay Time:
16 ns
Turn-off Delay Time:
13 ns
Rise Time:
12 ns
Fall Time:
14 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TSON-8
Applications:
Telecom, Datacenter SMPS based on the half-bridge ...
more info
Description:650 V Enhancement Mode GaN Power Transistor for Datacom Applications
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
140 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8080-8
Applications:
High power density and high efficiency power conve...
Dimensions:
8 x 8 mm
more info
Description:650 V, 600 to 1260 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
600 to 1260 milli-ohm
Continous Drain Current:
4.8 A
Pulsed Drain Current:
8 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
Adapter, Renewable energy, Telecom and data-com, S...
more info
Description:600 V, 140 to 260 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info
Description:150 V, 5.6 to 7 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 12.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
5.6 to 7 milli-ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
120 A
Total Charge:
7.6 nC
Input Capacitance:
865 pF
Output Capacitance:
280 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SOT8073-1
Applications:
High power density and high efficiency power conve...
Dimensions:
3.2 x 2.2 x 0.774 mm
more info
Description:650 V, 270 to 570 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
270 to 570 milli-ohm
Continous Drain Current:
7.9 A
Pulsed Drain Current:
14 A
Total Charge:
7.8 nC
Input Capacitance:
378 pF
Output Capacitance:
23 pF
Turn-on Delay Time:
2.5 ns
Turn-off Delay Time:
9.7 ns
Rise Time:
7 ns
Fall Time:
28 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
Description:600 V, 140 to 260 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 1.6 V
Drain Source Voltage:
600 V
Drain Source Resistance:
140 to 260 milli-ohm
Continous Drain Current:
10.6 A
Pulsed Drain Current:
23 A
Total Charge:
2.2 nC
Input Capacitance:
157 pF
Output Capacitance:
28 pF
Rise Time:
6 ns
Fall Time:
5 ns
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
PG-TIQFN-21
Applications:
Charger and Adaptors, Server, Telecom & Networking...
Dimensions:
8 x 8 mm
more info

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