GaN Power Transistors

17 GaN Power Transistors from 3 Manufacturers meet your specification.
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  • Industry : Industrial
  • Manufacturers : Nexperia, MGT Technology, EPC Space
Description:650 V, 60 to 135 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
60 to 135 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
58 A
Total Charge:
6.2 nC
Input Capacitance:
225 pF
Output Capacitance:
70 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
5 ns
Rise Time:
4 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8080-8
Applications:
High power density and high efficiency power conve...
Dimensions:
8 x 8 x 0.9 mm
more info
Description:300 V Radiation Hard eGaN Power Transistor
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
300 V
Drain Source Resistance:
32 milli-ohm
Continous Drain Current:
50 A
Pulsed Drain Current:
200 A
Total Charge:
15 nC
Input Capacitance:
1155 pF
Output Capacitance:
235 pF
Temperature operating range:
-55 to 150 Degree C
Qualification:
MIL-STD-750
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
Dimensions:
8 x 5.6 mm
more info
Description:650 V, 100 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
100 milli-ohm
Continous Drain Current:
45 A
Total Charge:
10 nC
RoHS Compliant:
Yes
Package Type:
Surface Mount
more info
Description:650 V Enhancement Mode GaN Power Transistor for Datacom Applications
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
140 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8080-8
Applications:
High power density and high efficiency power conve...
Dimensions:
8 x 8 mm
more info
Description:100 V, 42 to 45 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
42 to 45 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
42 A
Total Charge:
2.2 nC
Input Capacitance:
233 pF
Output Capacitance:
170 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
Description:650 V, 130 to 250 milli-ohm, GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.5 to 4.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
130 to 250 milli-ohm
Continous Drain Current:
11.5 to 18 A
Pulsed Drain Current:
80 A
Total Charge:
38 nC
Input Capacitance:
600 pF
Output Capacitance:
40 pF
Turn-on Delay Time:
44 ns
Turn-off Delay Time:
40 ns
Rise Time:
16 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
Battery Chargers, Power Adapters, LED Lighting, AC...
Dimensions:
8 x 8 mm
more info
Description:150 V, 5.6 to 7 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 12.1 V
Drain Source Voltage:
150 V
Drain Source Resistance:
5.6 to 7 milli-ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
120 A
Total Charge:
7.6 nC
Input Capacitance:
865 pF
Output Capacitance:
280 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
SOT8073-1
Applications:
High power density and high efficiency power conve...
Dimensions:
3.2 x 2.2 x 0.774 mm
more info
Description:100 V, 13 to 15 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
13 to 15 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
160 A
Total Charge:
11 nC
Input Capacitance:
1000 pF
Output Capacitance:
700 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
Description:650 V, 16000 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
-4.7 V
Drain Source Voltage:
650 V
Drain Source Resistance:
16000 milli-ohm
Continous Drain Current:
0.35 A
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN
Applications:
AC/DC LED Power Supply, LED AC Lamps, LED DC Lamps
more info
Description:650 V, 106 to 230 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
106 to 230 milli-ohm
Continous Drain Current:
17 A
Pulsed Drain Current:
32 A
Total Charge:
3.5 nC
Input Capacitance:
125 pF
Output Capacitance:
41 pF
Turn-on Delay Time:
3 ns
Turn-off Delay Time:
4 ns
Rise Time:
5 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5060-5
Applications:
High power density and high efficiency power conve...
Dimensions:
5.6 x 0.9 mm
more info

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