GaN Power Transistors

12 GaN Power Transistors from Efficient Power Conversion meet your specification.
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  • Industry : Industrial
  • Manufacturers : Efficient Power Conversion
Description:100 V, 2.4 to 3.2 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 to 3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
231 A
Total Charge:
17.8 nC
Input Capacitance:
2703 pF
Output Capacitance:
659 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
LGA
Applications:
DC-DC Converters, BLDC Motor Drives, Sync Rectific...
Dimensions:
3.5 x 1.95 mm
more info
Description:200 V, 32 to 43 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
32 to 43 milli-ohm
Continous Drain Current:
3 A
Pulsed Drain Current:
32 A
Total Charge:
4.3 nC
Input Capacitance:
573 pF
Output Capacitance:
134 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Speed DC-DC conversion, Wireless Power Transf...
Dimensions:
1.3 x 1.3 mm
more info
Description:100 V, 18 to 23 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
18 to 23 milli-ohm
Continous Drain Current:
1.7 A
Pulsed Drain Current:
34 A
Total Charge:
2.5 nC
Input Capacitance:
386 pF
Output Capacitance:
123 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
High Frequency DC-DC from 48 V–60 V input, ToF mod...
Dimensions:
1.3 x 0.85 mm
more info
Description:100 V, 7 to 10.5 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
7 to 10.5 milli-ohm
Continous Drain Current:
9.4 A
Pulsed Drain Current:
89 A
Total Charge:
5.5 nC
Input Capacitance:
664 pF
Output Capacitance:
294 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
48 V Servers, Lidar/Pulsed Power, Isolated Power S...
Dimensions:
2.15 x 1.25 mm
more info
Description:40 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.3 milli-ohm
Continous Drain Current:
69 A
Pulsed Drain Current:
409 A
Total Charge:
17.1 nC
Input Capacitance:
2178 pF
Output Capacitance:
1071 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High frequency DC-DC Converters, BLDC Motor Drives...
Dimensions:
2.85 x 3.25 mm
more info
Description:AEC-Q101 Qualified Enhancement Mode Power Transistor
Configuration:
Single
Industry:
Automotive, Industrial
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
80 V
Drain Source Resistance:
8 milli-ohm
Continous Drain Current:
8.2 A
Pulsed Drain Current:
75 A
Total Charge:
3.5 nC
Input Capacitance:
440 pF
Output Capacitance:
190 pF
Temperature operating range:
-40 to 150 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Automotive Lidar/TOF, 48 V Servers, Pulsed Power, ...
Dimensions:
1.5 x 1.5 mm
more info
Description:100 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1.8 milli-ohm
Continous Drain Current:
101 A
Pulsed Drain Current:
408 A
Total Charge:
23 nC
Input Capacitance:
3200 pF
Output Capacitance:
1000 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
AC-DC chargers, SMPS, adaptors, power supplies, Hi...
Dimensions:
3 mm x 5 mm
more info
Description:100 V Enhancement Mode Power Transistor for Solar MPPT Applications
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
3 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
197 A
Total Charge:
11.6 nC
Input Capacitance:
1667 pF
Output Capacitance:
482 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
AC-DC chargers, SMPS, adaptors, power supplies, Hi...
Dimensions:
3 mm x 5 mm
more info
Description:100 V Rad-Hard eGaN Power Transistor for Space Applications
Configuration:
Single
Industry:
Commercial, Industrial, Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.7 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
345 A
Total Charge:
15.2 nC
Input Capacitance:
1828 pF
Output Capacitance:
1025 pF
Temperature operating range:
-55 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC power, motor drives, lidar, ion thrusters, C...
Dimensions:
6.05 mm x 2.3 mm
more info
Description:100 V GaN Power Transistor for E-Mobility Applications
Configuration:
Single
Industry:
Commercial, Industrial, Automotive
Gate Threshold Voltage:
1.3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1.7 milli-ohm
Continous Drain Current:
64 A
Pulsed Drain Current:
350 A
Total Charge:
18 nC
Input Capacitance:
2664 to 3931 pF
Output Capacitance:
878 to 976 pF
Temperature operating range:
-40 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Solar Converters, 48 V DC-DC Converters, Sync rect...
Dimensions:
4.45 mm x 2.3 mm
more info

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