GaN Power Transistors

14 GaN Power Transistors from Xindao Electronic Technology meet your specification.
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  • Industry : Industrial
  • Manufacturers : Xindao Electronic Technology
Description:650 V, 160 to 340 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
160 to 340 milli-ohm
Continous Drain Current:
16 A
Pulsed Drain Current:
21 A
Total Charge:
7.8 nC
Input Capacitance:
378 pF
Output Capacitance:
23 pF
Turn-on Delay Time:
2.5 ns
Turn-off Delay Time:
9.7 ns
Rise Time:
7 ns
Fall Time:
28 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
Description:650 V, 600 to 1260 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
600 to 1260 milli-ohm
Continous Drain Current:
4.8 A
Pulsed Drain Current:
8 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
Adapter, Renewable energy, Telecom and data-com, S...
more info
Description:650 V, 270 to 570 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.2 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
270 to 570 milli-ohm
Continous Drain Current:
7.9 A
Pulsed Drain Current:
14 A
Total Charge:
7.8 nC
Input Capacitance:
378 pF
Output Capacitance:
23 pF
Turn-on Delay Time:
2.5 ns
Turn-off Delay Time:
9.7 ns
Rise Time:
7 ns
Fall Time:
28 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
Description:650 V, 110 to 230 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1 to 3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
110 to 230 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
75 A
Total Charge:
7.2 nC
Input Capacitance:
243 pF
Output Capacitance:
34 pF
Turn-on Delay Time:
6 ns
Turn-off Delay Time:
7 ns
Rise Time:
17 ns
Fall Time:
15 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info
Description:650 V, 160 to 330 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.8 to 3.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
160 to 330 milli-ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
17 A
Total Charge:
2.2 nC
Input Capacitance:
66 pF
Output Capacitance:
26 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
Description:650 V, 160 to 330 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.8 to 3.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
160 to 330 milli-ohm
Continous Drain Current:
11 A
Pulsed Drain Current:
17 A
Total Charge:
2.2 nC
Input Capacitance:
66 pF
Output Capacitance:
26 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
Dimensions:
8 x 8 mm
more info
Description:650 V, 900 to 1900 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
900 to 1900 milli-ohm
Continous Drain Current:
3.6 A
Pulsed Drain Current:
5 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
Adapter, Renewable energy, Telecom and data-com, S...
more info
Description:650 V, 300 to 600 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.5 to 3 V
Drain Source Voltage:
650 V
Drain Source Resistance:
300 to 600 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
11 A
Total Charge:
1.35 nC
Input Capacitance:
46 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
4.4 ns
Turn-off Delay Time:
4.1 ns
Rise Time:
11.8 ns
Fall Time:
11.2 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
DFN5060-8L
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info
Description:650 V, 270 to 570 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
270 to 570 milli-ohm
Continous Drain Current:
7.9 A
Pulsed Drain Current:
14 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
3.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
TO-252
Applications:
Adapter, Renewable energy, Telecom and data-com, S...
more info
Description:650 V, 600 to 1260 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
3.3 to 4.8 V
Drain Source Voltage:
650 V
Drain Source Resistance:
600 to 1260 milli-ohm
Continous Drain Current:
4.8 A
Pulsed Drain Current:
8 A
Total Charge:
7.9 nC
Input Capacitance:
293 pF
Output Capacitance:
17 pF
Turn-on Delay Time:
3.2 ns
Turn-off Delay Time:
7.4 ns
Rise Time:
5.5 ns
Fall Time:
27 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-220F
Applications:
Fast charger, Renewable energy, Telecom and data-c...
more info

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