GaN Power Transistors

17 GaN Power Transistors from Teledyne e2v HiRel Electronics meet your specification.
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  • Industry : Industrial
  • Manufacturers : Teledyne e2v HiRel Electronics
Description:650 V, 25 to 65 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
25 to 65 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14 nC
Input Capacitance:
516 pF
Output Capacitance:
127 pF
Turn-on Delay Time:
8.1 ns
Turn-off Delay Time:
9.8 ns
Rise Time:
8.5 ns
Fall Time:
7.7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Battery management, Traction Drive, dc-dc Converte...
Dimensions:
9 x 7.6 x 0.54 mm
more info
Description:100 V, 6 to 20 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.6 x 4.6 x 0.5 mm
more info
Description:650 V, 50 to 150 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 150 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.3 ns
Turn-off Delay Time:
8.2 ns
Rise Time:
4.9 ns
Fall Time:
5.2 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.1 x 8.5 x 0.56 mm
more info
Description:650 V, 11 to 60 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
9 x 7.6 x 0.54 mm
more info
Description:650 V, 50 to 150 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
50 to 150 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
60 A
Total Charge:
6.1 nC
Input Capacitance:
242 pF
Output Capacitance:
65 pF
Turn-on Delay Time:
4.3 ns
Turn-off Delay Time:
8.2 ns
Rise Time:
4.9 ns
Fall Time:
5.2 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.1 x 8.5 x 0.56 mm
more info
Description:100 V, 6 to 20 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.6 x 4.6 x 0.5 mm
more info
Description:650 V, 11 to 60 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
11 to 60 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
120 A
Total Charge:
14.2 nC
Input Capacitance:
518 pF
Output Capacitance:
126 pF
Turn-on Delay Time:
4.6 ns
Turn-off Delay Time:
14.9 ns
Rise Time:
12.4 ns
Fall Time:
22 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
11 x 9 x 0.54 mm
more info
Description:650 V, 100 to 258 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
100 to 258 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
30 A
Total Charge:
3.3 nC
Input Capacitance:
120 pF
Output Capacitance:
31 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
5 x 6.6 x 0.51 mm
more info
Description:650 V, 100 to 258 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
650 V
Drain Source Resistance:
100 to 258 milli-ohm
Continous Drain Current:
15 A
Pulsed Drain Current:
30 A
Total Charge:
3.3 nC
Input Capacitance:
120 pF
Output Capacitance:
31 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
5 x 6.6 x 0.51 mm
more info
Description:100 V, 6 to 20 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 to 2.6 V
Drain Source Voltage:
100 V
Drain Source Resistance:
6 to 20 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
140 A
Total Charge:
8 nC
Input Capacitance:
600 pF
Output Capacitance:
250 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
High efficiency power conversion, High density pow...
Dimensions:
7.6 x 4.6 x 0.5 mm
more info

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