GaN Power Transistors

8 GaN Power Transistors from Tagore Technology meet your specification.
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  • Industry : Industrial
  • Manufacturers : Tagore Technology
Description:650 V, 90 to 220 milli-ohm GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
90 to 220 milli-ohm
Continous Drain Current:
12 to 19 A
Pulsed Drain Current:
30 A
Total Charge:
3 nC
Input Capacitance:
110 pF
Output Capacitance:
35 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
Description:650 V, 180 to 440 milli-ohm GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Total Charge:
1.5 nC
Input Capacitance:
55 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
12 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
Description:650 V, 360 to 880 milli-ohm GaN Transistor
Configuration:
Dual
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
360 to 880 milli-ohm
Continous Drain Current:
4 to 6.5 A
Pulsed Drain Current:
7.5 A
Total Charge:
0.75 nC
Input Capacitance:
28 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
10 ns
Rise Time:
14 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
8 x 10 x 0.8 mm
more info
Description:650 V, 180 to 440 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Output Capacitance:
18 pF
Turn-on Delay Time:
17 ns
Turn-off Delay Time:
23 ns
Rise Time:
11 ns
Fall Time:
7 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
As switching FETs in singles, or in pairs as half-...
Dimensions:
5.7 x 0.85 mm
more info
Description:650 V, 90 to 220 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
90 to 220 milli-ohm
Continous Drain Current:
12 to 19 A
Pulsed Drain Current:
30 A
Total Charge:
3 nC
Input Capacitance:
110 pF
Output Capacitance:
35 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
15 ns
Rise Time:
9 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
5.7 x 0.8 mm
more info
Description:650 V, 360 to 880 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
360 to 880 milli-ohm
Continous Drain Current:
4 to 6.5 A
Pulsed Drain Current:
7.5 A
Total Charge:
0.75 nC
Input Capacitance:
28 pF
Output Capacitance:
9 pF
Turn-on Delay Time:
10 ns
Turn-off Delay Time:
10 ns
Rise Time:
14 ns
Fall Time:
4 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, PFC and inverter a...
Dimensions:
5.7 x 0.8 mm
more info
Description:650 V, 180 to 440 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.7 to 2.5 V
Drain Source Voltage:
650 V
Drain Source Resistance:
180 to 440 milli-ohm
Continous Drain Current:
6.5 to 10 A
Pulsed Drain Current:
15 A
Total Charge:
1.5 nC
Input Capacitance:
55 pF
Output Capacitance:
18 pF
Turn-on Delay Time:
8 ns
Turn-off Delay Time:
12 ns
Rise Time:
10 ns
Fall Time:
5 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN
Applications:
Ac-dc, dc-dc, dc-ac converters, Totem-pole and bi-...
Dimensions:
5.7 x 0.8 mm
more info
Description:650 V GaN HEMT for Charging Applications
Industry:
Commercial, Industrial
Drain Source Voltage:
650 V
Drain Source Resistance:
180 milli-ohm
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
QFN-22
Applications:
AC-DC Converters, Half Bridge topologies, LED ligh...
Dimensions:
5 x 7 x 0.8 mm
more info

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