GaN Power Transistors

6 GaN Power Transistors from EPC Space meet your specification.
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  • Industry : Industrial
  • Manufacturers : EPC Space
Description:300 V Radiation Hard eGaN Power Transistor
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
300 V
Drain Source Resistance:
32 milli-ohm
Continous Drain Current:
50 A
Pulsed Drain Current:
200 A
Total Charge:
15 nC
Input Capacitance:
1155 pF
Output Capacitance:
235 pF
Temperature operating range:
-55 to 150 Degree C
Qualification:
MIL-STD-750
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
Dimensions:
8 x 5.6 mm
more info
Description:100 V, 42 to 45 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
42 to 45 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
42 A
Total Charge:
2.2 nC
Input Capacitance:
233 pF
Output Capacitance:
170 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-A
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
Description:100 V, 13 to 15 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
13 to 15 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
160 A
Total Charge:
11 nC
Input Capacitance:
1000 pF
Output Capacitance:
700 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-B
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
Description:100 V, 5.2 to 6 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.2 to 6 milli-ohm
Continous Drain Current:
74 A
Pulsed Drain Current:
345 A
Total Charge:
11.7 nC
Input Capacitance:
1240 pF
Output Capacitance:
740 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-D
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 mm
more info
Description:40 V, 3.7 to 5 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 to 5 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-D
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 mm
more info
Description:200 V, 9.5 to 14.5 milli-ohm, GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
9.5 to 14.5 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
200 A
Total Charge:
13.5 nC
Input Capacitance:
1313 pF
Output Capacitance:
640 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FSMD-G
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 mm
more info

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