GaN Power Transistors

67 GaN Power Transistors from Innoscience meet your specification.
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  • Industry : Industrial
  • Manufacturers : Innoscience
Description:100 V Half-Bridge Solid-GaN Gate Driver for AI Applications
Configuration:
Half Bridge
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.4 milli-ohm
Continous Drain Current:
28 A
Pulsed Drain Current:
230 A
Total Charge:
9.2 to 12 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LGA
Applications:
AI, Server, Telecom, Super Computer, Motor Drive
Dimensions:
5 x 6.5 x 1.12 mm
more info
Description:Automotive Qualified Enhancement Mode GaN-on-Si Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.15 V
Drain Source Voltage:
80 V
Drain Source Resistance:
6 milli-ohm
Continous Drain Current:
13 A
Pulsed Drain Current:
180 A
Total Charge:
6.5 to 8 nC
Input Capacitance:
1200 pF
Output Capacitance:
450 pF
Temperature operating range:
-40 to 125 Degree C
Qualification:
AEC-Q101
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LGA
Applications:
LiDAR Application, Synchronous Rectification & Cla...
Dimensions:
3.40 x 2.40 mm
more info
Description:100 V Enhancement Mode GaN-on-Silicon Power Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
1.1 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.5 milli-ohm
Continous Drain Current:
29 A
Pulsed Drain Current:
125 A
Total Charge:
4.5 nC
Input Capacitance:
485 pF
Output Capacitance:
220 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
WLCSP
Applications:
Synchronous rectification, Class-D audio, High fre...
Dimensions:
2.5 x 1.5 mm
more info
Description:40 V, 9 to 12 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
9 to 12 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
50 A
Total Charge:
7.2 nC
Input Capacitance:
405 pF
Output Capacitance:
174 pF
Temperature operating range:
-40 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
WLCSP
Applications:
High side load switch, OVP protection in smart pho...
Dimensions:
1.2 x 1.7 mm
more info
Description:100 V, 2.1 to 2.7 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.1 to 2.7 milli-ohm
Continous Drain Current:
64 A
Pulsed Drain Current:
320 A
Total Charge:
13 nC
Input Capacitance:
1400 pF
Output Capacitance:
650 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
WLCSP
Applications:
Synchronous rectification, Class-D audio, High fre...
Dimensions:
4.45 x 2.30 mm
more info
Description:100 V, 1.4 to 1.8 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
1.4 to 1.8 milli-ohm
Continous Drain Current:
100 A
Pulsed Drain Current:
320 A
Total Charge:
22 nC
Input Capacitance:
2500 pF
Output Capacitance:
1100 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High frequency DC-DC converter, Point of Load, RF ...
Dimensions:
4 x 6 mm
more info
Description:100 V, 10 to 13.5 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
10 to 13.5 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
75 A
Total Charge:
3.2 nC
Input Capacitance:
380 pF
Output Capacitance:
220 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
WLCSP
Applications:
LiDAR Application, High Power Density DC-DC Conver...
Dimensions:
2.13 x 1.63 mm
more info
Description:100 V, 2.5 to 3.2 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
2.5 to 3.2 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.5 to 3.2 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
230 A
Total Charge:
9.2 to 12 nC
Input Capacitance:
1000 pF
Output Capacitance:
460 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
WLCSP
Applications:
Synchronous rectification, Class-D audio, High fre...
Dimensions:
3.5 x 2.13 mm
more info
Description:40 V, 3 to 4.3 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.7 to 2.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3 to 4.3 milli-ohm
Continous Drain Current:
24 A
Pulsed Drain Current:
160 A
Total Charge:
6.2 to 8.5 nC
Input Capacitance:
805 pF
Output Capacitance:
428 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High frequency DC-DC converter, Point of Load, RF ...
Dimensions:
4 x 3 mm
more info
Description:100 V, 2.2 to 2.8 milli-ohm GaN Transistor
Configuration:
Single
Industry:
Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.2 to 2.8 milli-ohm
Continous Drain Current:
80 A
Pulsed Drain Current:
320 A
Total Charge:
14 nC
Input Capacitance:
1500 pF
Output Capacitance:
700 pF
Temperature operating range:
-40 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
FCQFN
Applications:
High frequency DC-DC converter, Point of Load, RF ...
Dimensions:
3 x 5 mm
more info

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