Space Qualified GaN Transistors

56 Space Qualified GaN Transistors from 4 manufacturers meet your specification.

Space Qualified GaN Transistors from the leading manufacturers are listed below. Use the filters to find products based on your requirement. View product details, download datasheets, get pricing and quotes on products from the leading manufacturers.

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  • Industry : Space
Description:0.83 to 1.15 V, 10 A, GaN Power Transistor
Configuration:
Single
Industry:
Space, Industrial, Commercial
Drain Source Voltage:
0.83 to 1.15 V
Drain Source Resistance:
9 to 28 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
15 A
Output Capacitance:
500 to 1150 pF
Turn-on Delay Time:
45 to 150 ns
Turn-off Delay Time:
45 to 190 ns
Rise Time:
6.5 to 28 ns
Fall Time:
5 to 25 ns
Temperature operating range:
-40 to 130 Degree C
Package Type:
Surface Mount
Package:
SMT
Applications:
Power Switches/Actuators, Single and Multi-Phase M...
more info
Description:200 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
Qualification:
MIL-PRF-38535
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
9 x 4.7 x 1.82 mm
more info
Description:200 V, 11 to 16 milli-ohm, 40 A GaN Transistor
Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
11 to 16 milli-ohm
Continous Drain Current:
40 A
Pulsed Drain Current:
200 A
Total Charge:
9 to 11 nC
Input Capacitance:
950 to 1140 pF
Output Capacitance:
450 to 680 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Description:40 V, 8 A, GaN Transistor
Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
13 to 16 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.8 nC
Input Capacitance:
312 pF
Output Capacitance:
270 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
2.3 x 1.7 mm
more info
Description:40V, 65A Enhancement Mode GaN Power Transistors
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
Description:100 V, 8 to 10 milli-ohm, 48 A GaN Transistor
Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
8 to 10 milli-ohm
Continous Drain Current:
48 A
Pulsed Drain Current:
340 A
Total Charge:
12 to 15 nC
Input Capacitance:
1270 to 1530 pF
Output Capacitance:
800 to 1200 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Through Hole
Package:
TO-254
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Description:40 V, 10 A, GaN Transistor
Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
9 to 15 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
62 A
Total Charge:
3 nC
Input Capacitance:
312 pF
Output Capacitance:
270 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
2.3 x 1.7 mm
more info
Description:40 V Radiation-Tolerant Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.5 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
9 x 4.7 mm
more info
Description:700 V, 39 to 76 milli-ohm, 43 A GaN Transistor
Configuration:
Single
Industry:
Military, Space, Commercial, Industrial
Gate Threshold Voltage:
3.3 to 48 V
Drain Source Voltage:
700 V
Drain Source Resistance:
39 to 76 milli-ohm
Continous Drain Current:
43 A
Pulsed Drain Current:
240 A
Total Charge:
24 to 36 nC
Input Capacitance:
1500 pF
Output Capacitance:
190 pF
Turn-on Delay Time:
69 ns
Turn-off Delay Time:
99 ns
Rise Time:
14 ns
Fall Time:
12 ns
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Package:
LCC28
Applications:
High Efficiency DC-DC / PoL Converters, Motor Cont...
more info
Description:200 V, 18 A, GaN Transistor
Configuration:
Single
Industry:
Space, Military, Commercial, Industrial
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
18 to 25 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
72 A
Total Charge:
6 nC
Input Capacitance:
900 pF
Output Capacitance:
359 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Satellite EPS & Avionics, Deep Space Probes, High ...
Dimensions:
4.2 x 2.2 mm
more info

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  • Industry : Space

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