GaN Power Transistors

7 GaN Power Transistors from Efficient Power Conversion meet your specification.
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  • Industry : Space
  • Manufacturers : Efficient Power Conversion
Description:100 V Radiation Hardened E-Mode GaN Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
30 milli-ohm
Continous Drain Current:
10 A
Pulsed Drain Current:
42 A
Total Charge:
1.8 nC
Input Capacitance:
230 pF
Output Capacitance:
119 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Space applications: DC-DC power, motor drives, lid...
Dimensions:
1.7 mm x 1.1 mm
more info
Description:200 V Radiation Hard Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
11 milli-ohm
Continous Drain Current:
39 A
Pulsed Drain Current:
170 A
Total Charge:
11.7 nC
Input Capacitance:
1137 pF
Output Capacitance:
494 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Space applications: DC-DC power, motor drives, lid...
Dimensions:
4.6 x 2.6 mm
more info
Description:Radiation-Hard GaN Power Transistor for LiDAR and Deep Space Applications
Configuration:
Single
Industry:
Commercial, Space
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 milli-ohm
Continous Drain Current:
60 A
Pulsed Drain Current:
160 A
Total Charge:
6.4 nC
Input Capacitance:
817 pF
Output Capacitance:
485 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
Space Applications, DC-DC power, motor drives, lid...
Dimensions:
4.1 mm x 1.6 mm
more info
Description:100 V Rad-Hard eGaN Power Transistor for Space Applications
Configuration:
Single
Industry:
Commercial, Industrial, Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
2.7 milli-ohm
Continous Drain Current:
90 A
Pulsed Drain Current:
345 A
Total Charge:
15.2 nC
Input Capacitance:
1828 pF
Output Capacitance:
1025 pF
Temperature operating range:
-55 to 150 degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC power, motor drives, lidar, ion thrusters, C...
Dimensions:
6.05 mm x 2.3 mm
more info
Description:200 V Radiation Hardened GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
17 to 25 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
80 A
Total Charge:
5.4 nC
Input Capacitance:
525 pF
Output Capacitance:
256 pF
Temperature operating range:
-55 to 150 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Applications:
DC-DC power, motor drives, lidar, ion thrusters, C...
Dimensions:
3.6 mm x 1.6 mm
more info
Description:60 V Radiation-Hard GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.6 V
Drain Source Voltage:
60 V
Drain Source Resistance:
240 milli-ohm
Continous Drain Current:
2.4 A
Pulsed Drain Current:
4 A
Total Charge:
142 to 184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
17 to 26 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Die
Package:
BGA
Applications:
Satellite EPS & avionics, Deep space probes, High ...
Dimensions:
0.9 x 0.9 mm
more info
Description:Rad-Hard GaN Power Transistor for Deep Space Applications
Industry:
Space
Gate Threshold Voltage:
800 to 2500 mV
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 1.5 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 degree C
Package Type:
Die
Applications:
commercial satellite EPS & avionics, deep space pr...
Dimensions:
6.05 x 2.3 mm
more info

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