GaN Power Transistors

6 GaN Power Transistors from Renesas meet your specification.
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  • Industry : Space
  • Manufacturers : Renesas
Description:40V, 65A Enhancement Mode GaN Power Transistors
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
Description:200V, 7.5A Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 to 110 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
2766µm x 950µm (108.90 mils x 37.40 mils) Thicknes...
more info
Description:200 V Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
200 V
Drain Source Resistance:
45 milli-ohm
Continous Drain Current:
7.5 A
Total Charge:
2.5 to 5 nC
Input Capacitance:
270 pF
Output Capacitance:
150 to 200 pF
Temperature operating range:
-55 to 125 Degree C
Qualification:
MIL-PRF-38535
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
9 x 4.7 x 1.82 mm
more info
Description:40V, 65A Enhancement Mode GaN Power Transistors
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.7 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
1.2 to 8 milli-ohm
Continous Drain Current:
65 A
Total Charge:
19 to 25 nC
Input Capacitance:
1920 pF
Output Capacitance:
1620 to 2430 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info
Description:100 V Radiation Hard GaN Power Transistor for Relay Applications
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
Qualification:
MIL-PRF-38535
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
9.0 x 4.7 mm
more info
Description:100V, 60A Enhancement Mode GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.7 to 3 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5 to 12 milli-ohm
Continous Drain Current:
60 A
Total Charge:
14 to 25 nC
Input Capacitance:
1500 pF
Output Capacitance:
960 to 1250 pF
Temperature operating range:
-55 to 125 Degree C
RoHS Compliant:
Yes
Package Type:
Surface Mount
Applications:
Switching regulation, Motor drives, Relay drives, ...
Dimensions:
6050µm x 2300µm (238.19 mils x 90.55 mils) Thickne...
more info

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