GaN Power Transistors

11 GaN Power Transistors from EPC Space meet your specification.
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  • Industry : Space
  • Manufacturers : EPC Space
Description:Radiation Hard GaN Power Transistor for Avionics & Deep Space Applications
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
200 V
Drain Source Resistance:
28 milli-ohm
Continous Drain Current:
20 A
Pulsed Drain Current:
80 A
Total Charge:
5.4 nC
Input Capacitance:
525 pF
Output Capacitance:
256 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.461 x 3.683 mm
more info
Description:100 V Radiation-Hardened GaN Power Transistor for Satellite Applications
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
100 V
Drain Source Resistance:
5.2 milli-ohm
Continous Drain Current:
95 A
Pulsed Drain Current:
345 A
Total Charge:
11.7 nC
Input Capacitance:
1240 pF
Output Capacitance:
740 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Die
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8 x 5.6 x 1.6 mm
more info
Description:60 V Radiation Hard GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
2.5 V
Drain Source Voltage:
60 V
Drain Source Resistance:
580 milli-ohm
Continous Drain Current:
1 A
Pulsed Drain Current:
4 A
Total Charge:
0.142 to 0.184 nC
Input Capacitance:
16 to 22 pF
Output Capacitance:
0.1 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Commercial Satellite EPS & Avionics, Deep Space Pr...
Dimensions:
2.9 x 2.4 x 1.2 mm
more info
Description:100 V, 5 A, GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
100 V
Drain Source Resistance:
36 to 45 milli-ohm
Continous Drain Current:
5 A
Pulsed Drain Current:
20 A
Total Charge:
1.7 to 2.2 nC
Input Capacitance:
207 to 233 pF
Output Capacitance:
133 to 170 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
Description:40 V Radiation Hard GaN HEMT for Deep Space Applications
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.4 V
Drain Source Voltage:
40 V
Drain Source Resistance:
28 milli-ohm
Continous Drain Current:
8 A
Pulsed Drain Current:
32 A
Total Charge:
2.2 to 2.8 nC
Input Capacitance:
283 to 312 pF
Output Capacitance:
170 to 270 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 x 2.29 mm
more info
Description:200 V, 18 A, GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
200 V
Drain Source Resistance:
21 to 28 milli-ohm
Continous Drain Current:
18 A
Pulsed Drain Current:
72 A
Total Charge:
5 to 7 nC
Input Capacitance:
637 to 900 pF
Output Capacitance:
300 to 359 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
Description:200 V Radiation-Hardened GaN Power Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.8 V
Drain Source Voltage:
200 V
Drain Source Resistance:
68 to 130 milli-ohm
Continous Drain Current:
4 A
Pulsed Drain Current:
16 A
Total Charge:
1.6 to 3 nC
Input Capacitance:
106 to 150 pF
Output Capacitance:
72 to 90 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
3.4 x 3.4 mm
more info
Description:40 V Radiation Hard eGaN Power Switching HEMT
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
5 to 8.5 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.9 to 11.4 nC
Input Capacitance:
1100 to 1300 pF
Output Capacitance:
650 to 900 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.7 x 3.9 mm
more info
Description:100 V Radiation-Hard Enhancement Mode GaN Transistor
Configuration:
Single
Industry:
Space
Gate Threshold Voltage:
1.2 V
Drain Source Voltage:
100 V
Drain Source Resistance:
12 milli-ohm
Continous Drain Current:
30 A
Pulsed Drain Current:
120 A
Total Charge:
8.3 to 11 nC
Input Capacitance:
850 to 1000 pF
Output Capacitance:
500 to 700 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
5.4 x 3.6 x 1.9 mm
more info
Description:40 V GaN Power Transistor for Space Applications
Configuration:
Dual
Industry:
Space
Gate Threshold Voltage:
0.8 to 2.5 V
Drain Source Voltage:
40 V
Drain Source Resistance:
3.7 milliohm
Continous Drain Current:
95 A
Pulsed Drain Current:
530 A
Total Charge:
22 nC
Input Capacitance:
2830 pF
Output Capacitance:
1660 pF
Temperature operating range:
-55 to 150 Degree C
Package Type:
Surface Mount
Applications:
Satellite and Avionics, Deep Space Probes, High Sp...
Dimensions:
8.0 x 5.6 mm
more info

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